BAR81WH6327 INFINEON | Alldatasheet

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Technical content

BAR81... Silicon RF Switching Diode

  • Designed for use in shunt configuration in high performance RF switches
  • High shunt signal isolation
  • Low shunt insertion loss
  • Optimized for short - open transformation using λ/4 lines
  • Pb-free (RoHS compliant) package BAR81W /G32 /G31 /G34 /G33 Type Package Configuration LS(nH) Marking BAR81W SOT343 single shunt-diode 0.15* BBs * series inductance chip to ground Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 30 V Forward current IF 100 mA Total power dissipation Ts ≤ 138°C Ptot 100 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 120 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BAR81... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 20 V IR - - 20 nA Forward voltage IF = 100 mA VF - 0.93 1 V AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CT 0.6 0.57 0.9 pF Forward resistance IF = 5 mA, f = 100 MHz rf - 0.7 1 Ω Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω τ rr - 80 - ns I-region width WI - 3.5 - µm Shunt Insertion loss1) IF = 10 mA, f = 1.89 GHz IL - 30 - dB Shunt isolation1) VR = 3 V, f = 1.89 GHz ISO - 0.7 - Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF 1For more information please refer to Application Note 049.

BAR81... Diode capacitance CT = ƒ (VR) f = Parameter 0 2 4 6 8 10 12 14 16 V 20 VR 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pF CT 1 Mhz ... 1.8 GHz Reverse parallel resistance RP = ƒ(VR) f = Parameter 0 2 4 6 8 10 12 14 16 V 20 VR -1 10 0 10 1 10 2 10 3 10 4 10 KOhmRp

100 MHz

1 GHz

1.8 GHz

Forward resistance rf = ƒ (IF) f = 100MHz 10 -2 10 -1 10 0 10 1 10 2 mA IF -1 10 0 10 1 10 Ohmrf Forward current IF = ƒ (VF) TA = Parameter VF -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 A IF -40 °C 25 °C 85 °C 125 °C

BAR81... Forward current IF = ƒ (TS) BAR81W 0 15 30 45 60 75 90 105 120 °C 150 TS 100 mA 120 IF Permissible Puls Load RthJS = ƒ (tp) BAR81W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tP 0 10 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax/ IFDC = ƒ (tp) BAR81W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tP 0 10 1 10 2 10 IFmax/IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

BAR81...Package SOT343 Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 2005, June Date code (YM) BGA420 Type code 0.24 2.15 2.3 1.1Pin 1 0.6 0.8 1.6 1.15 0.9 1.25 ±0.1 0.1 MAX. 2.1±0.1 0.15 +0.1 -0.050.3 +0.1 2±0.2 ±0.10.9 A +0.10.6 AM0.2 1.3 -0.05 -0.05 0.15 0.1 M 0.10.1 MIN. Pin 1 Manufacturer

BAR81... Edition 2009-11-16 Published by Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com >). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.