BAR81W

BAR81W SIEMENS | Alldatasheet

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Technical content

Semiconductor Group Sep-04-19981 Silicon RF Switching Diode Preliminary data

• Design for use in shunt configuration
• High shunt signal isolation
• Low shunt insertion loss VPS05605 Type Marking Ordering Code PackagePin Configuration Q62702-A1270 4 = C13 = A2BAR 81W 1 = A1 2 = C2 SOT-343BBs Maximum Ratings Symbol Value UnitParameter Diode reverse voltage VR V30 IF 100 mAForward current mW100Total power dissipation, TS = 138 °C Ptot Junction temperature Tj °C150 Operating temperature range -55 ...+125 °CTop TstgStorage temperature -55 ...+150 Thermal Resistance Junction - ambient 1) £ 200R thJA K/W £ 120Junction - soldering point R thJS 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 1998-11-01

Semiconductor Group Sep-04-19982 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter ValuesSymbol Unit typ. max.min. Characteristics - - nAIRReverse current VR = 20 V 0.93VF 1 VForward voltage IF = 100 mA AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz C T 0.6 0.57 pF Forward resistance IF = 5 mA, f = 100 MHz rf - 0.7 - W 0.15 - nHSeries inductance Ls - Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF Semiconductor Group 2 1998-11-01

Semiconductor Group Sep-04-19983 Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 0 20 40 60 80 100 120 °C 150 TA,TS 100 mA 120 IF TS TA Permissible Pulse Load IFmax / IFDC = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load R thJS = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Semiconductor Group 3 1998-11-01

Semiconductor Group Sep-04-19984 Forward current IF = f (V F) TA = 25°C 400 500 600 700 800 mV 1000 VF -1 10 0 10 1 10 2 10 3 10 mA IF Forward resistance rf = f(IF) f = 100MHz 10 -1 10 0 10 1 mA IF 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Ohm 3.0 R F Diode capacitance C T = f (VR ) f = 100MHz 0 1 2 3 4 5 6 7 8 V 10 VR 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pF 1.0 C T Diode capacitance C T = f (V R) f = 1MHz 0 1 2 3 4 5 6 7 8 V 10 VR 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pF 1.0 C T Semiconductor Group 4 1998-11-01