BAR81W INFINEON | Alldatasheet

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BAR81... Silicon RF Switching Diode /G01 Designed for use in shunt configuration in high performance RF switches /G01 High shunt signal isolation /G01 Low shunt insertion loss /G01 Optimized for short - open transformation using /G02/G03/G04 lines BAR81W /G32 /G31 /G34 /G33 Type Package Configuration LS(nH) Marking BAR81W SOT343 single shunt-diode 0.15* BBs * series inductance chip to ground Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 30 V Forward current IF 100 mA Total power dissipation T s /G01 138°C Ptot 100 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS /G01 120 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BAR81... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current V R = 20 V IR - - 20 nA Forward voltage I F = 100 mA VF - 0.93 1 V AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CT 0.6 0.57 0.9 pF Forward resistance IF = 5 mA, f = 100 MHz rf - 0.7 1 /G02 Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 /G02 /G03 rr - 80 - ns I-region width WI - 3.5 - µm Shunt insertion loss1) VR = 3 V, f = 1.89 GHz |S21|2 - 0.7 - dB Shunt isolation1) IF = 10 mA , f = 1.89 GHz |S21|2 - 30 - Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF 1For more information please refer to Application Note 049.

BAR81... Diode capacitance CT = /G04/G05 (VR) f = Parameter 0 2 4 6 8 10 12 14 16 V 20 VR 0.2 0.3 0.4 0.5 0.6 0.7 0.8 F CT 1 MHz ... 1.8 GHz Reverse parallel resistance RP = /G04 (VR) f = Parameter 0 2 4 6 8 10 12 14 16 V 20 VR -1 10 0 10 1 10 2 10 3 10 4 10 KOhmRp

100 MHz

1 GHz

1.8 GHz

Forward resistance rf = /G04 (IF) f = 100MHz 10 -2 10 -1 10 0 10 1 10 2 mA IF -1 10 0 10 1 10 Ohmrf Forward current IF = /G04 (VF) TA = Parameter VF -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 A IF -40 °C 25 °C 85 °C 125 °C

BAR81... Forward current IF = /G04 (TS) BAR81W 0 15 30 45 60 75 90 105 120 °C 150 TS 100 mA 120 IF Permissible Puls Load RthJS = /G04 (tp) BAR81W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tP 0 10 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax/ IFDC = /G04 (tp) BAR81W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tP 0 10 1 10 2 10 IFmax/IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5