BAR81 SIEMENS | Alldatasheet
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Technical content
Semiconductor Group 1 Feb-26-1996 BAR 81 Preliminary data Silicon RF Switching Diode
- Design for use in shunt configuration
- High shunt signal isolation
- Low shunt insertion loss Type Marking Ordering Code Pin Configuration Package BAR 81 BBs Q62702- 1 = C 2 = A 3 = C 4 = A MW-4 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 30 V Forward current IF 100 mA Operating temperature range Top - 55 ... + 125 °C Storage temperature Tstg - 55 ... + 150 Q62702-A1145
Semiconductor Group 2 Feb-26-1996 BAR 81 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC characteristics Reverse current VR = 20 V, TA = 25 °C IR - - 20 nA Forward voltage IF = 100 mA VF - 0.93 1 V AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz C T 0.57 0.6 pF Forward resistance IF = 5 mA, f = 100 MHz rf - 0.7 - Ω Series inductance chip to ground Ls - 0.15 - nH
Semiconductor Group 3 Feb-26-1996 BAR 81 Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF Package