BAR81 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Silicon RF Switching Diodes /G01 Design for use in shunt configuration /G01 High shunt signal isolation /G01 Low shunt insertion loss VSO05553 Type Marking Pin Configuration Package BAR81 BBs 1 = C 2 = A 3 = C 4 = A MW-4 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 30 V Forward current IF 100 mA Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Reverse current VR = 20 V IR - - 20 nA Forward voltage IF = 100 mA VF - 0.93 1 V AC characteristics pFCT Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz 0.6 0.57 /G01Forward resistance IF = 5 mA, f = 100 MHz 0.7 --rf nHSeries inductance chip to ground Ls - 0.15 - Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF