BAR80 SIEMENS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Semiconductor Group 1 Edition A02, 27.02.95 Type Marking Ordering code (tape and reel) Pin configuration 1 2 3 4 Package 1) BAR 80 AAs Q62702-A1084 C A C A MW-4 Maximum ratings Parameter Symbol BAR 80 Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating temperature range Top -55...+125 °C Storage temperature range Tstg -55...+150 °C 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Silicon RF Switching Diode /G6c/G6c Design for use in shunt configuration /G6c Hight shunt signal isolation /G6c Low shunt insertion loss
Semiconductor Group 2 Edition A02, 27.02.95
Electrical characteristics
at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. Reverse current VR = 20 V IR --2 0 nA Forward voltage IF = 100 mA VF - 0.92 1 V Diode capacitance VR = 1 V,f = 1 MHz VR = 3 V,f = 1 MHz C T 0.6 0.92 1.6 1.3 pF Forward resistance f = 100MHz IF = 5 mA rf - 0.5 0.7 Ω Series inductance to ground Ls - 0.14 - nH
Application information
IF = 10 mA, f = 2 GHz, R G = R L = 50 Ω -2 3 - dB Shunt insertion loss VR = 5 V, f = 2 GHz, R G = R L = 50 Ω IL - 0.15 - dB Configuration of the shunt-diode -A perfect ground is essential for optimum isolation -The anode pins should be used as passage for RF
Semiconductor Group 3 Edition A02, 27.02.95 Forward current IF = f (TS,TA) Forward resistance rf = (IF) f = 100 MHz TT AS IF mA T T A S Dioden capacitance C T = f (VR ) f = 1 MHz
Semiconductor Group 4 Edition A02, 27.02.95 Permissible pulse load R thJS = f (tp) Permissible pulse load IFmax / IFDC = f (tp) R thJS K/W tp IF DC tp