BAR80 INFINEON | Alldatasheet
Document overview
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Technical content
Silicon RF Switching Diode /G01 Design for use in shunt configuration /G01 High shunt signal isolation /G01 Low shunt insertion loss VSO05553 Type Marking Pin Configuration Package BAR80 AAs 1 = C 2 = A 3 = C 4 = A MW-4 Maximum Ratings Symbol Value UnitParameter Diode reverse voltage VVR 35 IF 100 mAForward current Junction temperature 150 °CTj Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Reverse current VR = 20 V IR - - 20 nA Forward voltage IF = 100 mA VF 0.8 - 1 V AC characteristics Diode capacitance V R = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CT 0.6 0.92 1.6 1.3 pF Forward resistance IF = 5 mA, f = 100 MHz rf - 0.5 0.7 /G01 Series inductance chip to ground Ls - 0.14 - nH
Application information
IF = 10 mA, f = 2 GHz, RG=RL=50/G01 SI - 23 - dB Shunt insertion loss VR = 5 V, f = 2 GHz, RG=RL=50/G01 IL - 0.15 - Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF
Forward current IF = f (TS ) 0 20 40 60 80 100 120 °C 150 TS 100 120 mA 160 IF Permissible Pulse Load R thJS = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 K/WR thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax / IFDC = f(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
Forward resistance rf = f (IF) f = 100MHz EHD07010 rf FΙ -1 0 10 110 210mA -110 Ω 10 1 10 0 Diode capacitance CT = f (VR) f = 1MHz 00.0 EHD07009 C T RV 10 20 V 30 0.4 0.8 1.2 1.6 pF 2.0