BAR74 SIEMENS | Alldatasheet
Document overview
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Technical content
Silicon Switching Diode BAR 74 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BAR 74 Q62702-F704JBs SOT-23 Parameter Symbol Values Unit Reverse voltage VR 50 V Forward current IF 250 mA Junction temperature Tj 150 ˚C Total power dissipation,TS =5 4˚ C Ptot 370 mW Storage temperature range Tstg – 65 … + 150 Peak reverse voltage VRM 50 Surge forward current,t = 1µs IFS 4.5 A Thermal Resistance Junction - ambient2) Rth JA ≤ 330 K/W Junction - soldering point Rth JS ≤ 260 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.
- For high-speed switching 07.94
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. Test circuit for reverse recovery time Pulse generator:tp = 100 ns,D = 0.05 Oscillograph: R = 50Ω tr = 0.6 ns,Rj = 50Ω tr = 0.35 ns C ≤ 1p F UnitValuesParameter Symbol min. typ. max. DC characteristics VBreakdown voltage I(BR) = 100µA V(BR) 50 – – µAReverse current VR = 50 V VR = 50 V,TA = 150 ˚C IR 0.1 100 AC characteristics nsReverse recovery time IF = 10 mA,IR = 10 mA,RL = 100Ω measured atIR = 1 mA trr ––4 Forward voltage IF = 100 mA VF ––1 pFDiode capacitance VR = 0 V,f = 1 MHz C D ––2
Forward currentIF = f(TA*;TS) * Package mounted on epoxy Forward currentIF = f(VF) TA = 25 ˚C Reverse currentIR =f(TA) Peak forward currentIFM = f(t) TA = 25 ˚C
Forward voltageVF = f(TA)