BAR74 INFINEON | Alldatasheet
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/G01 For high-speed switching applications VPS05161 EHA07002 Type Marking Pin Configuration Package BAR74 JBs 1 = A 2 = n.c. 3 = C SOT23 Maximum Ratings Parameter Symbol UnitValue Diode reverse voltage VR V50 Peak reverse voltage VRM 50 250 mAForward current IF Surge forward current, t = 1 /G01 s IFS A4.5 Total power dissipation, TS = 54 °C Ptot mW370 150Tj °CJunction temperature Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 260 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) 50 - - V Forward voltage IF = 100 mA VF - - 1 Reverse current VR = 50 V IR - - 0.1 µA Reverse current VR = 50 V, TA = 150 °C IR - - 100 AC characteristics Diode capacitance VR = 0 V, f = 20 MHz C D - - 2 pF Reverse recovery time IF = 10 mA, IR = 10 mA, R L = 100 /G01 , measured at IR = 1mA trr - - 4 ns Test circuit for reverse recovery time EHN00015 OscillographΙF D.U.T. Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50/G02 Oscillograph: R = 50/G02 , tr = 0.35ns, C /G01 1pF
Reverse current IR = f (TA) BAR 74 EHB00012 10 1 210 ΙR 310 10 4 nA 0 50 150 AT 100 ˚C max. V R = 70 V 70V 25V typ. Forward current IF = f (TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 100 150 200 mA 300 IF Forward current IF = f (VF) TA = 25°C EHB00013BAR 74 Ι 0.5 1.0 V 1.5 100 mA 150 F FV maxtyp Peak forward current IFM = f (tp) TA = 25°C EHB00014 ΙFM t -610 D = 0.005 0.01 0.02 T D = T BAR 74 10-5 10-4 10-3 10-2 10-1 100s -110 010 110 210 A tp tp 0.05 0.1 0.2
Forward voltage VF = f (TA) 0.5 1.0 0 50 100 150 BAR 74 EHB00015 V TA VF ΙF = 100 mA 10 mA 1 mA 0.1 mA