BAR64-07 SIEMENS | Alldatasheet
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Technical content
Semiconductor Group 1 Edition A01, 22.07.94 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package 1) BAR64-07 PTs Q62702-A1044 C1 C2 A2 A1 SOT-143 Maximum Ratings per Diode Parameter Symbol BAR 64-07 Unit Reverse voltage VR 200 V Forward current IF 100 mA Total Power dissipation TS ≤ 25°C Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range Top -55 +150°C °C Storage temperature range Tstg -55...+150°C °C Thermal Resistance Junction-ambient 1) R th JA ≤ 450 K/W 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Silicon PIN Diode /G6c High voltage current controlled RF resistor for RF attenuator and swirches /G6c Freqency range above 1 MHz /G6c Low resistance and short carrier lifetime /G6c For frequencies up to 3 GHz
Semiconductor Group 2 Edition A01, 22.07.94
Electrical Characteristics
at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. DC Characteristics per Diode Breakdown voltage IR = 5 µA V(BR) 200 - - V Forward voltage IF = 50 mA VF - - 1.1 V Diode capacitance VR = 20 V, f = 1 MHz C T - 0.23 0.35 pF Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz rf 12.5 2.1 0.85 3.8 1.35 Ω Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA τL - 1.55 - µs Series inductance Ls - 2.0 - nH
Semiconductor Group 3 Edition A01, 22.07.94 Forward resistance rf= f (IF) f = 100 MHz Diode capacitance C T= f (VR ) f = 1 MHz. Forward current IF = f (VF)