BAR64 SIEMENS | Alldatasheet
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Technical content
BAR 64... Semiconductor Group 1 Edition A01, 23.02.95 Type Marking Ordering code (tape and reel) Pin configuration 1 2 3 Package 1) BAR 64 POs Q62702-A1041 A - C SOT-23 BAR 64-04 PPs Q62702-A1010 A C C/A BAR 64-05 PRs Q62702-A1042 A A C/C BAR 64-06 PSs Q62702-A1043 C C A/A Maximum ratings per diode Parameter Symbol BAR 64 Unit Reverse voltage VR 200 V Forward current IF 100 mA Total Power dissipation TS ≤ 90°C Ptot 250 250 mW Junction temperature Tj 150 °C Operating temperature range Top -55 +150°C °C Storage temperature range Tstg -55...+150°C °C Thermal resistance Junction-ambient 1) BAR64 BAR64-04,-05,-06 Junction-soldering point BAR64 BAR64-04,-05,-06 R th JA R th JS ≤ 320 ≤ 500 ≤ 240 ≤ 340 K/W 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Silicon PIN Diode /G6c High voltage current controlled /G6c RF resistor for RF attenuator and swirches /G6c Freqency range above 1 MHz /G6c Low resistance and short carrier lifetime /G6c For frequencies up to 3 GHz
BAR 64... Semiconductor Group 2 Edition A01, 23.02.95
Electrical characteristics
at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. DC characteristics per diode Breakdown voltage IR = 5 µA V(BR) 200 - - V Forward voltage IF = 50 mA VF - - 1.1 V Diode capacitance VR = 20 V, f = 1 MHz C T - 0.23 0.35 pF Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz rf 12.5 2.1 0.85 3.8 1.35 Ω Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA τL - 1.55 - µs Series inductance Ls - 1.4 - nH Forward current rF= f (TS;TA*) * mounted on alumina BAR64 Forward current rF= f (TS;TA*) per each diode BAR64-05,-05,-06 IF mA T TA S T TAS IF mA T T A S T T A S
BAR 64... Semiconductor Group 3 Edition A01, 23.02.95 Permissible pulse load R thJS = f (tp) BAR64 Permissible pulse load Ifmax/If DC =f(tp) BAR64 K/W Permissible pulse load R thJS= f (tp) BAR64-04,-05,-06 Permissible pulse load IFmax /IFDC = f (tp) BAR64-04,-05,-06 K/W
BAR 64... Semiconductor Group 4 Edition A01, 23.02.95 Forward current IF=f(VF) Forward resistance rf= f (IF) f = 100 MHz Diode capacitance C T= f (VR ) f = 1 MHz.