BAR64-04W

BAR64-W SIEMENS | Alldatasheet

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BAR 64 ... W Semiconductor Group Sep-04-19981 Silicon PIN Diode

• High voltage current controlled RF resistor for RF attenuator and switches
• Frequency range above 1 MHz
• Low resistance and short carrier lifetime
• For frequencies up to 3 GHz VSO05561 BAR 64-04W BAR 64-05W BAR 64-06W Type Marking Ordering Code Pin Configuration Package BAR 64-04W BAR 64-05W BAR 64-06W PPs PRs PSs Q62702-A1264 Q62702-A1265 Q62702-A1266 1 = A1 1 = A1 1 = C1 2 = C2 2 = C2 2 = C2 SOT-3233=C1/A2 3 = C1/2 3 = A1/2 Maximum Ratings Parameter Symbol UnitValue VVR 200Diode reverse voltage Forward current IF 100 mA mWTotal power dissipation, TS £ 115 °C Ptot 250 Tj 150 °CJunction temperature - 55 ...+150Operating temperature range Top Storage temperature Tstg - 55 ...+150 Thermal Resistance RthJA £ 300Junction - ambient 1) K/W RthJS £ 140Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 1998-11-01

BAR 64 ... W Semiconductor Group Sep-04-19982 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter ValuesSymbol Unit max.typ.min. DC characteristics Breakdown voltage I(BR) = 5 µA - V-200V(BR) - - 50IRReverse current VR = 20 V µA Forward voltage IF = 50 mA VF - 1.1 mV- AC characteristics Diode capacitance VR = 20 V, f = 1 MHz -C T 0.23 pF0.35 Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz W 2.8 1.35 rf 12.5 2.1 0.85 Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA - - µs1.55trr -Series inductance -Ls nH1.2 Semiconductor Group 2 1998-11-01

BAR 64 ... W Semiconductor Group Sep-04-19983 Forward current IF = f (TA*;TS) * mounted on alumina 0 20 40 60 80 100 120 °C 150 TA,TS 100 mA 140 IF 0 20 40 60 80 100 120 °C 150 TA,TS 100 mA 140 IF TS 0 20 40 60 80 100 120 °C 150 TA,TS 100 mA 140 IF TA 0 20 40 60 80 100 120 °C 150 TA,TS 100 mA 140 IF Permissible Pulse Load R thJS = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax / IFDC = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Semiconductor Group 3 1998-11-01

BAR 64 ... W Semiconductor Group Sep-04-19984 Diode capacitance C T = f (V R) f = 1MHz 0 5 10 15 20 V 30 VR 0.0 0.1 0.2 0.3 0.4 pF 0.6 C T Forward resistance rf = f(IF) f = 100MHz 10 -2 10 -1 10 0 10 1 10 2 10 3 mA IF -1 10 0 10 1 10 2 10 3 10 Ohm R F Forward current IF = f (V F) TA = parameter VF -2 10 -1 10 0 10 1 10 2 10 3 10 mA IF Intermodulation intersept point IP3 = f (IF) f = parameter 10 -1 10 0 10 1 mA IF 1 10 2 10 dBm IP3 10 -1 10 0 10 1 mA IF 1 10 2 10 dBm IP3 f=1800MHz f=900MHz Semiconductor Group 4 1998-11-01