BAR64-02W SIEMENS | Alldatasheet
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Technical content
Semiconductor Group Sep-07-19981 Silicon PIN Diode
- High voltage current controlled RF resistor for RF attenuator and switches
- Frequency range above 1 MHz
- Low resistance and short carrier lifetime
- Very low inductance
- For frequencies up to 3 GHz
- Extremely small plastic SMD package
1 VES05991
Type Marking Ordering Code Pin Configuration Package BAR 64-02W M Q62702-A1215 1 = C 2 = A SCD-80 Maximum Ratings Parameter Symbol UnitValue Diode reverse voltage VR V200 100Forward current mAIF Total power dissipation, TS £ 125°C Ptot mW250 Junction temperature Tj °C150 Operating temperature range Top - 55 ...+150 °C Storage temperature Tstg - 55 ...+150 Thermal Resistance Junction - ambient 1) R thJA £ 220 K/W Junction - soldering point R thJS £ 140 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 1998-11-01
Semiconductor Group Sep-07-19982 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol UnitValues typ. max.min. Characteristics V(BR) 200Breakdown voltage I(BR) = 5 µA - - V Forward voltage IF = 50 mA VF - - 1.1 mV AC characteristics - 0.23Diode capacitance VR = 20 V, f = 1 MHz CT pF0.35 -CC 0.09 -Case capacitance f = 1 MHz Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz rf 12.5 2.1 0.85 3.8 1.35 W Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA trr - 1.55 - µs Series inductance Ls - 0.6 - nH Semiconductor Group 2 1998-11-01
Semiconductor Group Sep-07-19983 Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 0 20 40 60 80 100 120 1500 100 120 TS TA Permissible Pulse Load R thJS = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax / IFDC = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Semiconductor Group 3 1998-11-01
Semiconductor Group Sep-07-19984 Forward resistance rf = f(IF) f = 100MHz 10 -2 10 -1 10 0 10 1 10 2 10 3 mA IF -1 10 0 10 1 10 2 10 3 10 Ohm R F Diode capacitance C T = f (V R) f = 1MHz 0 5 10 15 20 V 30 VR 0.0 0.1 0.2 0.3 0.4 pF 0.6 C T Intermodulation intersept point IP3 = f (IF) f = parameter 10 -1 10 0 10 1 mA IF 1 10 2 10 dBm IP3 10 -1 10 0 10 1 mA IF 1 10 2 10 dBm IP3 f=1800MHz f=900MHz Forward current IF = f (V F) TA = 25°C VF -2 10 -1 10 0 10 1 10 2 10 3 10 mA IF Semiconductor Group 4 1998-11-01