BAR63 INFINEON | Alldatasheet
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BAR63... Silicon PIN Diodes /G01 PIN diode for high speed switching of RF signals /G01 Very low forward resistance (low insertion loss) /G01 Very low capacitance (high isolation) /G01 For frequencies up to 3GHz BAR63-02.. BAR63-03W BAR63-07L4BAR63-04 BAR63-04W BAR63-06 BAR63-06W BAR63-05 BAR63-05W /G31 /G32 /G31 /G44/G32 /G32 /G33 /G34 /G44/G31 /G33 /G31 /G44/G32 /G32 /G44/G31 /G33 /G31 /G44/G32 /G32 /G44/G31 /G33 /G31 /G44/G32 /G32 /G44/G31 Type Package Configuration LS(nH) Marking BAR63-02L* BAR63-02V BAR63-02W BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4* TSLP-2-1 SC79 SCD80 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 TSLP-4-4 single, leadless single single single series series common cathode common cathode common anode common anode parallel pair, leadless 0.4 0.6 0.6 1.8 1.8 1.4 1.8 1.4 1.8 1.4 0.4 G G GG G G4s G4s G5s G5s G6s G6s P3s * preliminary data
BAR63... Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation BAR63-02L, TS/G01/G02 118°C BAR63-02V, -02W, BAR63-03W, TS/G01/G02 115°C BAR63-04...BAR63-06, TS /G02 55°C BAR63-04S, TS/G01/G02 115°C BAR63-04W...BAR63-06W, TS/G01/G02 105°C BAR63-07L4, TS/G01/G02 tbd Ptot 250 250 250 250 250 250 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BAR63-02L BAR63-02V, BAR63-02W BAR63-03W BAR63-04...BAR63-06 BAR63-04S BAR63-04W...BAR63-06W BAR63-07L4 RthJS /G01 125 /G01 140 /G01 155 /G01 380 /G01 180 /G01 180 /G01 tbd K/W 1For calculation of RthJA please refer to the Technical Information
BAR63... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I(BR) = 5 µA V(BR) 50 - - V Reverse current V R = 35 V IR - - 10 nA Forward voltage IF = 100 mA VF - 0.95 1.2 V
BAR63... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz VR = 0 V, 100 MHz ... 1.8 GHz CT 0.21 0.3 0.3 pF Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz RP 500 k/G02 Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz rf 1.2 /G02 Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 /G02 /G03 rr - 75 - ns I-region width WI - 4.5 - µm Insertion loss1) IF = 1 mA, f = 1.8 GHz IF = 5 mA, f = 1.8 GHz IF = 10 mA, f = 1.8 GHz |S21|2 -0.15 -0.11 -0.1 dB Isolation1) VR = 0 V, f = 0.9 MHz VR = 0 V, f = 1.8 MHz VR = 0 V, f = 2.45 MHz |S21|2 -17.9 -12.3 -10 1BAR63-02L in series configuration, Z = 50/G01
BAR63... Diode capacitance CT = /G04 (VR) f = 1MHz - 1.8GHz V EHD07139 R TC 0 0V pF 0.1 0.2 0.3 0.4 0.5 10 20 30 Reverse parallel resistance RP = /G04 (VR) f = Parameter 0 5 10 15 20 V 30 VR -1 10 0 10 1 10 2 10 3 10 KOhmRp
100 MHz
1 GHz
1.8 GHz
Forward resistance rf = /G04 (IF) f = 100MHz Ι EHD07138 F fr Ω 10 -2 -110 mA10 -1 10 0 10 1 10 2 10 2 10 0 10 1 Forward current IF = /G04 (VF) TA = Parameter mA 0.3 Ι F F EHD07171 V BAR 63... 10-3 10-2 10-1 100 101 102 103 0.5 0.8 1 V 1.2 25 ˚C
BAR63... Forward current IF = /G04 (TS) BAR63-04...BAR63-06 0 15 30 45 60 75 90 105 120 °C 150 TS mA 120 IF Forward current IF = /G04 (TS) BAR63-02V, BAR63-02W 0 15 30 45 60 75 90 105 120 °C 150 TS mA 120 IF Forward current IF = /G04 (TS) BAR63-03W 0 15 30 45 60 75 90 105 120 °C 150 TS mA 120 IF Forward current IF = /G04 (TS) BAR63-04W...BAR63-06W 0 15 30 45 60 75 90 105 120 °C 150 TS mA 120 IF
BAR63... Permissible Puls Load RthJS = /G04 (tp) BAR63-04...BAR63-06 t EHB07146 P 10 -6 10 -5 10 -4 10 -3 10 -2 s1 0 0 T t P D = t P T 10 0 110 210 0.5 0.2 0.1 0.05 0.05 0.01 0.005 R thJS K/W Permissible Pulse Load IFmax/ IFDC = /G04 (tp) BAR63-04...BAR63-06 t EHB07147 P F 10 -6 10 -5 10 -4 10 -3 10 -2 s1 0 0 T t P D = t P T 10 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Ι max DCΙ F 110 10 2 Permissible Puls Load RthJS = /G04 (tp) BAR63-02V, BAR63-02W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 K/W RthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax/ IFDC = /G04 (tp) BAR63-02V, BAR63-02W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 IFmax/ IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
BAR63... Permissible Pulse Load IFmax/ IFDC = /G04 (tp) BAR63-03W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 IFmax/ IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = /G04 (tp) BAR63-03W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax/ IFDC = /G04 (tp) BAR63-04W...BAR63-06W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 IFmax/ IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = /G04 (tp) BAR63-04W...BAR63-06W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0
BAR63... Insertion loss |S21|2 = /G04 (f) IF = Parameter BAR63-02L in series configuration, Z = 50/G01 0 1 2 3 4 GHz 6 f -0.4 -0.3 -0.2 dB Insertion Loss 1 mA 5 mA 10 mA Isolation |S21|2 = /G04 (f) VR = Paramter BAR63-02L in series configuration, Z = 50/G01 0 1 2 3 4 GHz 6 f -30 -25 -20 -15 -10 dB Isolation 0 V 1 V 10 V