BAR63-06

BAR63 SIEMENS | Alldatasheet

Document overview

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Technical content

BAR 63... Semiconductor Group 1 Edition A01, 23.02.95 Type Marking Ordering code (tape and reel) Pin configuration 1 2 3 Package 1) BAR 63 G3 Q62702-A1036 A - C SOT-23 BAR 63-04 G4 Q62702-A1037 A C C/A BAR 63-05 G5 Q62702-A1038 A A C/C BAR 63-06 G6 Q62702-A1039 C C A/A Maximum ratings Parameter Symbol BAR 63 Unit Reverse voltage VR 50 V Forward current IF 100 mA Total Power dissipation TS ≤ 80°C Ptot 250 250 mW Operating temperature range Top -55 +150°C °C Storage temperature range Tstg -55...+150°C °C Thermal resistance Junction-ambient 1) BAR63 BAR 63-04,-05,-06 R th JA ≤ 450 ≤ 540 K/W Junction-soldering point BAR64 BAR63-04,-05,-06 R th JS ≤ 280 ≤ 380 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Silicon PIN Diode /G6c PIN diode for high speed switching of RF signals /G6c Low forward resistance /G6c Very low capacitance /G6c For frequencies up to 3 GHz

BAR 63... Semiconductor Group 2 Edition A01, 23.02.95

Electrical characteristics

at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. DC characteristics Breakdown voltage IR = 5 µA V(BR) 50 - - V Reverse leakage VR = 20 V IR --5 0 nA Forward voltage IF = 100 mA VF - 0.95 1.2 V Diode capacitance VR = 0 V, f = 100 MHz C T - 0.3 - pF Diode capacitance VR = 5 V, f = 1 MHz C T - 0.21 0.3 pF Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz rf 1.2 Ω Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA τs -7 5 - ns Series inductance Ls - 1.4 - nH Forward current IF = f (TA*TS) BAR63 Forward current IF = f (TA*TS) per each Diode BAR63-04,-05,-06 T TA S IF mA T TA S T T A S IF T T A S mA

BAR 63... Semiconductor Group 3 Edition A01, 23.02.95 Permissible pulse load R thJS = f (tp) BAR63 Permissible pulse load IFmax / IFDC = f (tp) BAR63 tp thJS K/W R tp I IFmax FDC Permissible pulse load R thJS = f (tp) BAR63-04,-05,-06 Permissible pulse load IFmax / IFDC = f (tp) BAR63-04,-05,-06 R thJS tp K/W tp IFmax IF DC

BAR 63... Semiconductor Group 4 Edition A01, 23.02.95 Forward current IF= f(VF) 0.3 0.5 1 1.2 25°C 85°C -40°C IF [mA] VF [V] 10-3 10-2 101 100 102 103 10-1 0.8 Forward resistance rf= f (IF) f = 100 MHz Diode capacitance C T= f (VR ) f = 1 MHz.