BAR63-W SIEMENS | Alldatasheet

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BAR 63 ... W Semiconductor Group Sep-07-19981 Silicon PIN Diode

  • PIN diode for high speed switching of RF signal
  • Low forward resistance
  • Very low capacitance
  • For frequencies up to 3 GHz VSO05561 BAR 63-04W BAR 63-05W BAR 63-06W Marking Ordering Code Pin Configuration PackageType 3=C1/A2 3 = C1/2 3 = A1/2 SOT-3232 = C2 2 = A2 2 = C2 BAR 63-04W BAR 63-05W BAR 63-06W Q62702-A1261 Q62702-A1267 Q62702-A1268 1 = A1 1 = A1 1 = C1 G4s G5s G6s Maximum Ratings UnitParameter Symbol Value Diode reverse voltage VR V50 100 mAIFForward current Total power dissipation, TS £ 105 °C Ptot mW250 150Junction temperature Tj °C TopOperating temperature range - 55 ...+150 Storage temperature Tstg - 55 ...+150 Thermal Resistance K/WRthJA £ 340Junction - ambient 1) Junction - soldering point RthJS £ 180 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 1998-11-01

BAR 63 ... W Semiconductor Group Sep-07-19982 Electrical Characteristics at TA = 25°C, unless otherwise specified. UnitParameter ValuesSymbol min. max.typ. DC characteristics -50V(BR)Breakdown voltage I(BR) = 5 µA 50Reverse current VR = 20 V IR µA-- 1.2Forward voltage IF = 100 mA -VF mV0.95 AC characteristics 0.3 pF 0.3 0.21 CT Diode capacitance VR = 0 V, f = 100 MHz VR = 5 V, f = 1 MHz W 1.2 Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz rf -Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA trr µs75- -Series inductance -Ls nH1.4 Semiconductor Group 2 1998-11-01

BAR 63 ... W Semiconductor Group Sep-07-19983 Forward current IF = f (TA*;TS) * mounted on alumina 0 20 40 60 80 100 120 °C 150 TA,TS 100 mA 120 IF TS 0 20 40 60 80 100 120 °C 150 TA,TS 100 mA 120 IF TA 0 20 40 60 80 100 120 °C 150 TA,TS 100 mA 120 IF Permissible Pulse Load IFmax / IFDC = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load R thJS = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Semiconductor Group 3 1998-11-01

BAR 63 ... W Semiconductor Group Sep-07-19984 Diode capacitance C T = f (V R) f = 1MHz V EHD07139 R TC 0 0V pF 0.1 0.2 0.3 0.4 0.5 10 20 30 Forward resistance rf = f (IF) f = 100MHz I EHD07138 F fr W 10 -2 -110 mA10 -1 10 0 10 1 10 2 10 2 10 0 10 1 Semiconductor Group 4 1998-11-01