BAR63-03W SIEMENS | Alldatasheet

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Technical content

Semiconductor Group 1 Edition A01, 22.07.94 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 Package 1) BAR 63-03W G Q62702-A1025 A C SOD-323 Maximum Ratings Parameter Symbol BAR 63-03W Unit Reverse voltage VR 50 V Forward current IF 100 mA Total Power dissipation TS ≤ 111°C Ptot 250 mW Operating temperature range Top -55 +150°C °C Storage temperature range Tstg -55...+150°C °C Thermal Resistance Junction-ambient 1) R th JA ≤ 235 K/W Junction-soldering point R th JS ≤ 155 K/W 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Silicon PIN Diode /G6c PIN diode for high speed switching of RF signals /G6c Low forward resistance /G6c Very low capacitance /G6c For frequencies up to 3 GHz

Semiconductor Group 2 Edition A01, 22.07.94

Electrical Characteristics

at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. DC Characteristics Breakdown voltage IR = 5 µA V(BR) 50 - - V Reverse leakage VR = 20 V IR --5 0 nA Forward voltage IF = 100 mA VF - 0.95 1.2 V Diode capacitance VR = 0 V, f = 100 MHz C T - 0.3 - pF Diode capacitance VR = 5 V, f = 1 MHz C T - 0.21 0.3 pF Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz rf 1.2 Ω Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA τL -7 5 - ns Series inductance Ls - 2.0 - nH

Semiconductor Group 3 Edition A01, 22.07.94 Diode capacitance C T = f (VR ) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Forward current IF = f (TA*TS) IF T TS A mA S TA TS

Semiconductor Group 4 Edition A01, 22.07.94 Permissible load R thJS = f (tp) Permissible load IFmax / IFDC = f (tp) R thJS K/W tp tp IF IF DC