BAR63-02W SIEMENS | Alldatasheet

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Semiconductor Group Sep-07-19981 Silicon PIN Diode

  • PIN diode for high speed switching of RF signals
  • Low forward resistance, small capacitance small inductance
  • Very low capacitance
  • For frequencies up to 3 GHz 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAR 63-02W G Q62702-A1211 1 = C 2 = A SCD-80 Maximum Ratings Parameter ValueSymbol Unit Diode reverse voltage V50VR Forward current 100IF mA Total power dissipation, TS = 115 °C Ptot mW250 Junction temperature Tj °C150 Operating temperature range Top -55 ...+150 °C Storage temperature Tstg -55 ...+150 Thermal Resistance Junction - ambient 1) R thJA £ 220 K/W Junction - soldering point R thJS £ 140 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 1998-11-01

Semiconductor Group Sep-07-19982 Electrical Characteristics at TA = 25 =C, unless otherwise specified. Parameter Symbol UnitValues min. typ. max. DC characteristics -V(BR) 50Breakdown voltage I(BR) = 5 µA - V Reverse current VR = 35 V µAIR - 10- Forward voltage IF = 100 mA VF - 0.95 1.2 V AC characteristics Diode capacitance VR = 0 V, f = 100 MHz VR = 5 V, f = 1 MHz CT 0.3 0.21 0.3 pF Case capacitance f = 1 MHz CC - 0.09 - Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz rf 1.2 W Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA trr - 75 - µs Series inductance Ls - 0.6 - nH Semiconductor Group 2 1998-11-01

Semiconductor Group Sep-07-19983 Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 0 20 40 60 80 100 120 °C 150 TA,TS 100 mA 120 IF 0 20 40 60 80 100 120 °C 150 TA,TS 100 mA 120 IF TS 0 20 40 60 80 100 120 °C 150 TA,TS 100 mA 120 IF TA 0 20 40 60 80 100 120 °C 150 TA,TS 100 mA 120 IF Permissible Pulse Load R thJS = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax / IFDC = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Semiconductor Group 3 1998-11-01

Semiconductor Group Sep-07-19984 Diode capacitance C T = f (V R) f = 1MHz 0 5 10 15 20 V 30 VR 0.0 0.1 0.2 0.3 0.4 pF 0.6 C T Forward resistance rf = f(IF) f = 100MHz 10 -2 10 -1 10 0 10 1 10 2 10 3 mA IF -1 10 0 10 1 10 2 10 3 10 Ohm R F Forward current IF = f (V F) TA = 25°C VF -2 10 -1 10 0 10 1 10 2 10 3 10 mA IF Semiconductor Group 4 1998-11-01