BAR60 SIEMENS | Alldatasheet
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Technical content
(tape and reel) Marking Package 1)Pin Configuration BAR 60 Q62702-A78660 SOT-143 BAR 61 Q62702-A12061 Parameter Symbol Values Unit Reverse voltage VR 100 V Total power dissipation,TS ≤ 65 ˚C2) Ptot 250 mW Tj 150 ˚C Forward current IF 140 mA Junction temperature Storage temperature range Top – 55 … + 150 Tstg – 55 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 580 K/W Junction - soldering point Rth JS ≤ 340 Operating temperature range 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.
- RF switch
- RF attenuator for frequencies above 10 MHz 07.94
Electrical Characteristics per Diode atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC/AC Characteristics VForward voltage IF = 100 mA VF – – 1.25 µsCharge carrier life time IF = 10 mA,IR = 6 mA τL –1– nA µA Reverse current VR = 50 V VR = 100 V IR 100 µSZero bias conductance VR = 0,f = 100 MHz gp –5 0 – pFDiode capacitance VR = 50 V,f = 1 MHz VR = 0,f = 100 MHz C T 0.25 0.2 0.5 ΩDifferential forward resistance f = 100 MHz,IF = 0.01 mA IF = 0.1 mA IF = 1.0 mA IF = 10 mA rf 2800 380
Forward currentIF =f (V F) Forward resistancerf =f (IF) f = 100 MHz Forward currentIF =f (TS;TA *) *Package mounted on alumina Diode capacitanceC T =f (V R )
Application circuit for attenuation networks with diode BAR 60 Application circuit for attenuation networks with diode BAR 61