BAR50 INFINEON | Alldatasheet

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BAR50... Silicon PIN Diodes /G01 Current-controlled RF resistor for switching and attenuating applications /G01 Frequency range above 10 MHz up to 6 GHz /G01 Especially useful as antenna switch in mobile communication /G01 Very low capacitance at zero volt reverse bias at freuencies above 1 GHz (typ. 0.15 pF) /G01 Low forward resitance /G01 Very low harmonics BAR50-02L BAR50-02V BAR50-03W BAR50-05 /G31 /G32 /G33 /G31 /G44/G32 /G32 /G44/G31 Type Package Configuration LS(nH) Marking BAR50-02L* BAR50-02V BAR50-03W BAR50-05* TSLP-2-1 SC79 SOD323 SOT23 single,leadless single single common cathode 0.4 0.6 1.4 1.8 AB a blue A OCs * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation BAR50-02L, TS /G01 130°C BAR50-02V, TS /G01 120°C BAR50-03W, TS /G01 116°C BAR50-05, TS /G01 60°C Ptot 250 250 250 250 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150

BAR50... Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W BAR50-05 RthJS /G01 80 /G01 120 /G01 135 /G01 360 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current V R = 50 V IR - - 50 nA Forward voltage I F = 50 mA VF - 0.95 1.1 V 1For calculation of RthJA please refer to Application Note Thermal Resistance

BAR50... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 5 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1...1.8 GHz, BAR50-02L VR = 0 V, f = 1...1.8 GHz, all other CT 0.24 0.2 0.2 0.1 0.15 0.5 0.4 pF Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz RP k/G02 Forward resistance IF = 0.5 mA, f = 100 MHz IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz rf 16.5 4.5 /G02 Charge carrier life time I F = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 /G02 /G03 rr - 1100 - ns I-region width WI - 56 - µm Insertion loss1) IF = 3 mA, f = 1.8 GHz IF = 5 mA, f = 1.8 GHz IF = 10 mA, f = 1.8 GHz |S21|2 -0.56 -0.4 -0.27 dB Isolation1) VR = 0 V, f = 0.9 GHz VR = 0 V, f = 1.8 GHz VR = 0 V, f = 2.45 GHz VR = 0 V, f = 5.6 GHz |S21|2 -24.5 -20 -18 -12 1BAR50-02L in series configuration, Z = 50 /G01

BAR50... Diode capacitance CT = /G04/G05 (VR) f = Parameter 0 2 4 6 8 10 12 14 16 V 20 VR 0.1 0.15 0.2 0.25 0.3 0.35 0.4 pF 0.5 CT

1 MHz

100 MHz

1 GHz

1.8 GHz

Reverse parallel resistance RP = /G04 (VR) f = Parameter 0 2 4 6 8 10 12 14 16 V 20 VR -1 10 0 10 1 10 2 10 3 10 KOhmRp Forward resistance rf = /G04 (IF) f = 100 MHz 10 -2 10 -1 10 0 10 1 10 2 mA IF -1 10 0 10 1 10 2 10 3 10 4 10 Ohmrf Forward current IF = /G04 (VF) TA = Parameter VF -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 A IF -40 °C 25 °C 85 °C 125 °C

BAR50... Forward current IF = /G04 (TS) BAR50-02L 0 15 30 45 60 75 90 105 120 °C 150 TS 100 mA 120 IF Forward current IF = /G04 (TS) BAR50-02V, BAR50-03W 0 15 30 45 60 75 90 105 120 C° 150 TS 100 mA 120 IF Forward current IF = /G04 (TS) BAR50-05 0 15 30 45 60 75 90 105 120 °C 150 TS 100 mA 120 IF Permissible Puls Load RthJS = /G04 (tp) BAR50-02L 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 °C tp 0 10 1 10 2 10 mA RthJS D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005

BAR50... Permissible Pulse Load IFmax/ IFDC = /G04 (tp) BAR50-02L 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 °C tp 0 10 1 10 mA IFmax/ IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = /G04 (tp) BAR50-02V 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 RthJS D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 Permissible Pulse Load IFmax/ IFDC = /G04 (tp) BAR50-02V 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = /G04 (tp) BAR50-02W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 RthJS D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005

BAR50... Permissible Pulse Load IFmax/ IFDC = /G04 (tp) BAR50-02W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = /G04 (tp) BAR50-03W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 RthJS D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 Permissible Pulse Load IFmax/ IFDC = /G04 (tp) BAR50-03W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = /G04 (tp) BAR50-05 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tP 0 10 1 10 2 10 3 10 RthJS D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005

BAR50... Permissible Pulse Load IFmax/ IFDC = /G04 (tp) BAR50-05 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.05 0.02 0.01 0.5 0.2 0.1 0.5 Insertion loss |S21|2 = /G04 (f) IF = Parameter BAR50-02L in series configuration, Z = 50/G01 0 1 2 3 4 GHz 6 f -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 dB |S21|2 5 mA 10 mA 100 mA 3 mA Isolation |S21|2 = /G04 (f) VR = Parameter BAR50-02L in series configuration, Z = 50/G01 0 1 2 3 4 GHz 6 f -30 -25 -20 -15 -10 dB |S21|2 0 V 1 V 10 V