BAP64-04WS SECELECTRONICS | Alldatasheet

Document overview

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Technical content

Small Signal General Purpose PiN Diode 23-Jan-2014 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.   Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

/circle6 Low diode capacitance /circle6 Low series inductance /circle6 High voltage, current controlled /circle6 RF resistor for RF attenuators and switches /circle6 RF attenuators and switches MARKING CODE

PACKAGE INFORMATION

(at Ta = 25 °C unless otherwise specified) Parameter Symbol Ratings Unit Continuous Reverse Voltage V R 175 V Continuous Forward Current I F 100 mA Power Dissipation P D 200 mW Thermal Resistance Junction to Ambient R θJA 625 °C / W Junction, Storage Temperature T J, T STG 150, -55 ~ +150 °C

ELECTRICAL CHARACTERISTICS

(at Ta = 25 °C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions Forward Voltage V F - - 1.1 V I F =50mA - - 10 V R =175V Reverse Voltage Leakage Current I R - - 1 µA VR =20V - 0.52 - V R =0, f =1MHz - - 0.5 V R =1 V, f =1MHz Diode Capacitance C D - - 0.35 pF VR =20 V, f =1MHz - - 40 I F = 0.5 mA, f =100MHz - - 20 I F =1mA, f =100MHz - - 3.8 I F =10mA, f =100MHz Diode Forward Resistance 1 r D - - 1.35 Ω IF =100mA, f =100MHz Charge Carrier Life Time t L - 1.55 - µS When switched from I F =10mA to I R =6mA; R L =100 Ω; measured at I R =3mA BAP64-04WS BAP64-06WS - 1.6 - Series Inductance BAP64-05WS LS - 1.4 - nH I F=10mA, f=100MHz Note: 1.Guaranteed on AQL basis: inspection level S4,AQL 1.0. Part Name BAP64-04WS BAP64-05WS BAP64-06WS Marking 4W 5W 6W Circuit SOT-323 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40

Small Signal General Purpose PiN Diode 23-Jan-2014 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES