BAL99 GE | Alldatasheet

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Technical content

FEATURES

Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) T op View .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) Case: SOT -23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings for a single diode at 25 °C ambient temperature unless otherwise specified. SOT -23 BAL99, BAV99 BAL99 Marking: JF Symbol Value Unit Reverse Voltage, Peak Reverse Voltage V R, VRM 70 V Forward Current (continuous) I F 250 mA Non-Repetitive Peak Forward Current at t = 1 µs at t = 1 ms at t = 1 s IFSM IFSM IFSM 0.5 A A A Power Dissipation at Tamb = 25 °C P tot 3501) mW Junction T emperature T j 150 °C Storage Temperature Range T S –65 to +150 °C 1) Device on fiberglass substrate, see layout. T op View Silicon Epitaxial Planar Diode Fast switching diodes, especially suited for automatic insertion. This diode is also available in other configurations including a dual common cathode with type designation BAV70 and a dual common anode with type designation BAW56. BAV99 Marking: JE T op View

ELECTRICAL CHARACTERISTICS

Ratings for one diode at 25 °C ambient temperature unless otherwise specified BAL99, BAV99 Symbol Min. T yp. Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF 0.715 0.855 1.0 1.25 V V V V Leakage Current at V R = 70 V at VR = 70 V , Tj = 150 °C at VR = 25 V , Tj = 150 °C IR IR IR 2.5 100 µA µA µA Capacitance at VF = VR = 0; f = 1 MHz C tot ––1 . 5 p F Reverse Recovery Time from IF = 10 mA to IR = 10 mA measured at IR = 1 mA, RL = 100 Ω trr ––6n s Thermal Resistance Junction to Ambient Air R thJA – – 430 1) K/W 1) Device on fiberglass substrate, see layout. Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12)