BA892 SIEMENS | Alldatasheet

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Technical content

Semiconductor Group Au -03-19981 Silicon Rf Switching Diode Preliminary data

  • For VHF band switching in TV / VTR tuners
  • Low forward resistance, small capacitance, small inductance

1 VES05991

Type Marking Ordering Code Pin Configuration Package BA 892 A Q62702-A1214 1 = C 2 = A SCD-80 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage 35 VVR Forward current mAIF 100 -55 ...+125 °COperating temperature range Top Storage temperature Tstg -55 ...+150 Thermal Resistance K/WJunction - ambient 1) R thJA £ 450 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 1998-11-01

Semiconductor Group Au -03-19982 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Values UnitSymbol min. max.typ. DC characteristics IR - - µAReverse current VR = 20 V VF - - 1 VForward voltage IF = 100 mA AC characteristics pFC TDiode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz 0.92 0.85 1.3 1.1 0.65 0.6 WForward resistance IF = 3 mA, f = 100 MHz IF = 10 mA, f = 100 MHz 0.45 0.36 rf 0.7 0.5 kWReverse resistance VR = 1 V, f = 100 MHz 1/gp -100- nHSeries inductance Ls - 0.6 - Semiconductor Group 2 1998-11-01

Semiconductor Group Au -03-19983 Diode capacitance C T = f (V R) f = 1MHz 00.0 EHD07009 C T RV 10 20 V 30 0.4 0.8 1.2 1.6 pF 2.0 Forward resistance rf = f (IF) f = 100MHz EHD07010 rf FI -1 0 10 110 210mA -110 W 10 1 10 0 Forward current IF = f (V F) TA = 25°C VF -2 10 -1 10 0 10 1 10 2 10 3 10 mA Semiconductor Group 3 1998-11-01