BA891 LRC | Alldatasheet
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Technical content
LESHAN RADIO COMPANY, LTD. S21–1/2 Band-switching diode SOD523 SC-79 BA 891 ANODE CATHODE
FEATURES
- Ultra small plastic SMD package
- Low diode capacitance: max. 1.05 pF
- Low diode forward resistance: max. 0.7 Ω
- Small inductance.
APPLICATIONS
- Low loss band-switching in VHF television tuners
- Surface mount band-switching circuits.
DESCRIPTION
The BA891 is a planar, high performance band-switching diode in the ultra small SOD523 SMD plastic package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT V R continuous reverse voltage – 35 V II F continuous forward current – 100 mA P tot total power dissipation T s =90°C – 715 mW T stg storage temperature -65 +150 °C T j junction temperature -65 +150 °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V F forward voltage I F =10 mA – 1 V I R reverse current V R =30 V – 20 nA C d diode capacitance f = 1 MHz; note 1; see Fig.1 V R = 1 V 0.8 1.05 pF V R = 3 V 0.65 0.9 pF r D diode forward resistance f = 100 MHz; note 1; see Fig.2 I F = 3 mA 0.45 0.7 Ω I F = 10 mA 0.36 0.5 Ω L S series inductance 0.6 - nH Note 1. Guaranteed on AQL basis; inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL P ARAMETER V ALUE UNIT R th j-s thermal resistance from junction to soldering-point 85 K/W
LESHAN RADIO COMPANY, LTD. S21–2/2 BA 891 10 -1 10 –1 11 0 I F (mA ) r D ( Ω ) 0.8 0.6 0.4 0.2 01 02 03 0 V R ( V ) C d (pF) f = 1 MHz; T j =25°C Fig.1 Diode capacitance as a function of reverse voltage; typical values. Fig.2 Diode forward resistance as a function of forward current; typical values. f = 100 MHz; T j =25°C