BA887 SIEMENS | Alldatasheet
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Technical content
Type Ordering Code Pin Configuration Marking Package (taped) 1 2 3 BA 887 Q62702- A C PDs SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 50 V Forward current IF 100 mA Total power dissipationTS £ 40 °C 1) Ptot 250 mW Junction temperature Tj 150 °C Storage temperature range Tstg – 55 … + 150 °C Thermal Resistance Junction-soldering point1) Rth JS £ 220 K/W Junction-ambient Rth JA £ 300 K/W 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Silicon PIN Diode Preliminary Data BA 887 l RF switch, RF attenuator for frequencies above
10 MHz
Semiconductor Group 1 10 94
atTA = 25°C, unless otherwise specified. Package Outline Parameter Symbol Value Unit min. typ. max. Reverse current VR =3 0V IR ––2 0 nA Forward voltage IF = 100 mA VF – 0.9 – V Diode capacitance VR =1 0V ,f= 1 MHz VR =0V ,f= 100 MHz C T 0.52 0.27 pF Forward resistancef= 100 MHz IF = 1.5 mA IF =1 0m A rf 4.2 W Charge carrier lifetime IF =1 0m A ,IR = 6 mA,IR =3m A tL – 2.5 – ms SOT-23
Diode capacitanceC T = f(VR ) f= 1 MHz, 100 MHz 3rd Harmonic intercept point vs forward currentf= 100 MHz Forward resistancert =(IF),f= 100 MHz