BA6415AFS

BA6415AFS ROHM | Alldatasheet

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OHM [a= Reve a STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT SERIES ~- 2phase MDA for VTR Cylinder TYPE BA6GB4H1SAFS PACKAGE OUTLINES Fig— 1 (Plastic Mold) BLOCK DIAGRAM Fig-2 ~ FUNCTIONS + Output division supplies the motor driver current with two-phase, full-wave, and linear way. + Control Amp1,2 control the motor drive current. - Thermal shut down circuit detects the junction temperature and shut down the coil output at high temperature. + Built in Amp1,2 and hysteresis Amp that FG or PG signal amplify. ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) [Output current | Towax [#81200 | mA [Input current | Tecrmmx | BT mA femwaerme | "| output current *To use at temperature above Ta=25°C, reduce 8mW/°C. > (Mounting on 90mm 50mm x 1.6mm glass epoxy board) **Do not, however exceed Pd and ASO. (Each phase) RECOMMENDED OPERATING CONDITIONS (Ta=25°C ) ELECTRICAL CHARACTERISTICS (Unless otherwise specified Ta=25°C Vcc=12V) [Circuit current | Tee [| — | 8.5 [13.0 [| m [| Figs | fete ee . output voltage ROHM assumes no responsibility for the use of any circuits described herein, conveys no license under any patent or other right,and makes no representations thatthe circuits are free form patent infringement. ROM! assumes no responsibility for the use of any circuits described herein, conveys no ‘ license under any patent or other right. and makes no representations that the circuits are free from patent infringement. ification ee ee wn A a soe en A ee Aa 3,7 (1x100x50) S

ELECTRICAL CHARACTERISTICS (Unless otherwise specified Ta=25°C Vcc=12V) [~ MD A wT - Hall amplifier Vinx mW p-p a cd meses | | [SS] ET [vette input bias current ° Feo ld voltage "H" El a A ld voltage “L” [~Ecv(Voltage control~ [TTT [Input voltage renge | Ev | 0 | — | Weg | v [| Fig7?7 | - 0.48XVree [Input current | Teevin | = | 1.0 [6 | wa [eeve2.sv | Fig?’ [Output idle current |Tecviare| — | 0 | 5 | ma [Ecv=2.0v | Fig? | [imvrerest ovr Te Pee ee eect | AVin=100mV [~Eex(Current controty~ | | | PP feet | tae | | [into | current ratio Toon Tconr=30 WA, 504A difference [~ampt,Amp2~ |] [| TT [=Input current [tana | = | 0.4 | 0.2 | wa [Vine2.ev Figo [Open Toop gain | Ga | 65 | 70 | — | dB |fin-S00vz [Figo perewn Tee eee la 1/2Vree naa a Dev") nL -1.48 | -1.08 [output "L” voltage | Vora | — | 1.05 [1.45 | V [To »=0.5mA _[ Fig~9 | iene fT PY Pe voltage range [~Hys. Amp t.2~[ TTT [Hysteresis width | Vnvs [2ti2 [#150 [4108 [ mw | [ Fig-t0._| [Output “LU” voltage | Vornve | = | 0.12 | 0.32 [ V_ [Tonve=2m | Fig“10_| Poser | wer] fee eet Te resistor. ©This product is not designed for protection against radioactive rays. Specification No.

Semiconductor IC _BA6415AFS 3/17 ; : 10.040.3 . 24 : 13 | - MHUORPAAABAEEEL Mop eo ee eeees PL ti Ti TE Ti Ti i Pi ei Tt Tt

0 BA6B4AZI1LSAFS

a Q , C) Co) CL ie 7 WUUUU UU OU oI Fone ep ewWerteee ! VOOUUUW/UOUUUY | i 1 , y LOT. . 0.2401 SU TrtataTatatainintalacy a =a. | 2 A 3| asl STOI5] _ J “(UNIT :mm) Fig-1 Package Outline Plastic Mold Specification cme = Specification No.

RoOHM Semiconductor IC BA6415AFS 4/IT POWER DISSIPATION CURVE i) 25 50 75 100 125 150 Ta [TC] 90mm x 50mm x 1.6mm glass epoxy board To use at temperature above Ta=25°C, reduce 8mW per.1°C Specification No.

ROM Semiconductor IC _BA6415AFS 5/17 Vreg _ | s | y LE | ese tt | élHall Amp (i) area, : Amp river aH = Att apt) a= , my Amp Driver | 2 /\\ I20] HaLL aa a Bh i ° + [a | To each block mp nc.f9 Hys. Amp] Hys. Amp2 16 pe ae a a: [12 Pe < T re T Fig-2 Block Diagram Specification meme = Specific;

Semiconductor IC BA6415AFS TAT TF OT ~~ ~ ae! + =x eE>2z2 ee oe >o-= >> 35 2 ow aan ae z aA FrEGOFEF 0U6O+=rPHMaaa ~ SSDzS>010ty, 8 28 SSOUSCe>uwweaccc OOOO BA6415AFS DOOUUUUUUUUUO ste T TT ees sls ellill ele tS. Bz= err ts NS OFT Steet é aco Zeezz2= 5 228 SZ=zzZzZ 2 = 5 = «<< S232 253 3325 SESE85 > Sess Fig-3 Pin Configuration J Specification Specification No. ROHM CO.,LTD. 1$202201-BA6415AFS-1-2

Semiconductor IC BA6415AFS . 8/17 (1) ADDITIONAL PARTS OF TEST CIRCUIT PIN2 PIN24 _ PIN23 PIN2I PINT _. _ Ld 0.1 uF ; 10 2 102 4 ; (2) Function Table ; INPUT | OUTPUT i eina_[ ema | eins | pane | puna | paves! ernza | exvas| Peta fete fe tu fe |e | fae Tete ti tw tita te | H=2.6V L=2.4V X Specification No. ROHM CO,, ITD. 1S702201-BAG415AFS-1-2

ROM Semiconductor IC BA6415AFS ; 9/17 — Tt Wo 4V Icc:Value of Ammeter Vree:Value of Voltmeter 2.5V ies av Fig-4 > i leonte : 100 uA Isx:Value of Ammeter 8 Vin=2.5V DIP ir ied OOOO Ti Vinu:Value of | Hn*—Hn7 | when outputs be altered. . Hn7=2.5V (n=1,2) DUUDODUUUUUUUU . 4 <— Isa : ® PIN3~6 I Vne2. 5V Fig-5 Specificat Specification No. ROHM CO., ITD. TSZ02201-BA6415AFS-1-2

Semiconductor IC BA6415AFS 10/17 T Sv \\ \\ Vox:Value of voltmeter Vox when output terminal "H" Vor:Value of voltmeter VoL when output terminal "L” 800mA 800mA - PIN3~6 PIN21,23 —, PIN21,23° ¢— Vin i Vow Vou af Fig-6 > Ecvors: Ecvors=0.48-Vree—Vecv Tt rn applies Value of Vecv when V,V2=50mV ®) w Vecw + Tecviare:Output current when Vecv=2V a V:/10Q , V2/100 III iif Tecvin:Value of Ammeter Gecv: V3=Vi or V2 when Eov=2.8V V4=V, or V2 when Ecv=3.3V Geev= _(V/100-V3/100 Witt | UUUUU 0.5V [A/V] af Th 2.6V 2.4V Fieg-7 ification Specification No ROHM CO., ITD. 18202201-BA6415AFS-1-2

Products Type Page . Semiconductor IC BA6415AFS V/17 Font <—_ ® t : oy, Tour/Icoxt: Tour/Iconr= {Az(mA)-Ax(mA)} /204A @) applies the next value A;(mA)=value of ammeter when Icont=30 WA OOM ey A2(mA)=value of ammeter when Icont=50 UWA Hall IN H=2.6V,L=2.4V Alour: The maximum value of difference of the output current on next condition. UI WU OUUUOUUU Teonr=304A,Hn*=H, L(n=1, 2) i Hn7=2.5V Via wa ey"

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• o. ama PENLOQ 28 10 203 2 swab 1816 [i _ sw Sw2 PIN1O PINI1 PIN12 PINIS PINlA PINL3 . fe) ° 2.5V Fig-9 1/2Vreg , Ga: Ga=Vo/Vi, Swi=t Sw2=1 Sw3=1 fin=500HZ Iina:value of ammeter, Sw2=2 Vi1:=2.5V Aven: AVeas —Wa=120. x 100% 1/2Vree Vonaivalue of Vg, Sw2=2 Sw3=3 Vinet/2Vree-0.3V Vora:value of V4, Su2=2 Sw3=2 Vin=1/2Vrest0.3V - ifical Specification No. ROHM CO,, LTD. 1SZ02201-BA6415AFS-1-2

Semiconductor IC BA6415AFS 12/17 PINIY.14 Amp 1,2 Hys Amp1,2 . O > PING, 16 2 o > O-0 vin ° piniel. 1s PINI2.13 mr 19 sw OAS) t 9 2.5V Fig-10 2mA * Vnve:In case V2="H" ,by rise of Vin level value of V; is Vx. In case V2="H'->"L", by drop of Vin level value of V; is Vi. Vnys=t (VirVi)/2 Swi=open Vornys: VIN=4V, Value of V2 (Swi=1). Renys:If value of “A” is Aq, Vin=1V,Sw1=2, then Ranys=Vres/Ar. Specification Specification No. ROHM CO., ITD. 1$202201-BAS415AFS-1-2

RON Semiconductor IC BA6415AFS 13/17 OCAUTIONS 1. INPUT/OUTPUT CIRCUIT (1)Ecv(pint7) Vreg nod. v v Unit: Q (TYP) (2)Coil output (pin2,24,23,21) Vee | | ‘ur ae | ) Shs . Z ° Unit: Q (TYP) fic Specification No. ROHM CO., ITD. 18202201-BA6415AFS-1-2

Semiconductor IC _BAG415AFS IA/17 (3)Hall input(pin3,4,5,6),€cr input - IK Q PING, 6 1K Q PIN3,5 PINIB : 500Q 500Q Unit:Q (TYP) (4)Amp1,Amp2 input-output > oVres Vreg IK 1K % i 30

10 Q fe) 10, 15

© GND i 4 4 GND 12,13 . 11.14 Unit: Q (TYP) ti Specification No. ROHM CO., ITD. 18202201-BA8415AFS~1-2

Semiconductor IC BA6415AFS 15/17 (5)Hys. Amp input-output + o Vreg o Vres = e ie 10k YZ 8,16 J @ Ik e 46 ; o GND o GND 10,15 : Unit: Q — (TYP) %*Note: resistors of input-output circuit derange up to 30% if Specification No. ROHM CO., LTD. 1$202201-BA6415AFS-1-2

Semiconductor IC BA6415AFS 16/17 2. Ecv input(pini7) The relation of Ecv and output current is under mention. . OUTPUT CURRENT ° Slope 0.55A/V(TYP) 2.4V Ec(¥) (TYP) 3. Hall input Input circuit of Hall Amp shows Cautions 1.(3). For Hall input,a signal above 50mVp-p should be added between pin3-pin4 and pin5-pin6. The input range of the DC level is from 2V to Vreg-1.5V. x There is no problem if the input is around Vreg/2 about the input range of the DC level. . Hall input impedance is above 1MQ. Since the differential operation of pin3-pin4 and pinS-pin6,current cannot flow during the transistor off period. A Hall device with lower DC offset is recommended, because the BAG415AFS directly amplifies the DC offset of Hall device output by its linear driving . Hall element can be used with both series connection and parallel connection. Vee Vee Parallel connection Series connection if Specification No. ROHM CO., ITD. $202201-BA6415AFS-1-2

RoOnM@ Semiconductor IC BA6415AFS 17/17 4. Ecr input Input circuit is-Cautions 1.(3). 2Vr+5000 resistance is directly inserted. There is no current limitation except 5000 resistance. 5 . Amp1,Amp2 Use Amp1,Amp2 within input range,if you exceed input range, they may be malfunction. It recommends that input range is 0.6(V)~Vcc~1.2(V). 6 . Hysteresis Amp Use Amp1,Amp2 within input range,if you exceed input range, they may be malfunction. It recommends that input range is 0.6(V)~Vce-1.2(V). 7 . Thermal Shut Down(TSD) If temperature of chip becomes 175°C(TYP),it makes each output high impedance . i and shut down output current. It has the temperature hysteresis of about 20°C(TYP) - Specification No. ROHM CO.,LTD. 18202201-BAG415AFS-1-2