BA592E6327 INFINEON | Alldatasheet

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Technical content

BA592/BA892... Silicon RF Switching Diode

  • For band switching in TV/VTR tuners and mobile applications
  • Very low forward resistance (typ. 0.45 Ω @ 3 mA)
  • Small capacitance
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101 BA592 BA892/-02L BA892-02V /G31 /G32 Type Package Configuration LS(nH) Marking BA592 BA892 BA892-02L BA892-02V SOD323 SCD80 TSLP-2-1 SC79 single single single, leadless single 1.8 0.6 0.4 0.6 blue S AA AA A Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 35 V Forward current IF 100 mA Junction temperature TJ 150 °C Operating temperature range Top -55 ... 125 Storage temperature TStg -55 ... 150

BA592/BA892... Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BA592 BA892, BA892-02V BA892-02L RthJS ≤ 135 ≤ 120 ≤ 70 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 20 V IR - - 20 nA Forward voltage I F = 100 mA VF - - 1 V 1For calculation of RthJA please refer to Application Note Thermal Resistance

BA592/BA892... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 0 V, f = 100 MHz CT 0.65 0.6 0.92 0.85 1.4 1.1 pF Reverse parallel resistance V R = 0 V, f = 100 MHz RP - 100 - kΩ Forward resistance IF = 3 mA, f = 100 MHz IF = 10 mA, f = 100 MHz rf 0.45 0.36 0.7 0.5 Ω Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3mA, RL = 100 Ω τ rr - 120 - ns I-region width WI - 3 - µm Insertion loss1) IF = 0.1 mA, f = 1.8 GHz IF = 3 mA, f = 1.8 GHz IF = 10 mA, f = 1.8 GHz IL 0.1 0.5 0.4 dB Isolation1) VR = 0 V, f = 100 MHz VR = 0 V, f = 470 MHz VR = 0 V, f = 1 GHz ISO 23.5 10.5 5.5 1BA892-02L in series configuration, Z = 50Ω

BA592/BA892... Diode capacitance CT = ƒ (VR) f = Parameter 0 5 10 15 20 V 30 VR 0.4 0.8 1.2 pF CT 1 MHz ... 1 GHz Reverse parallel resistance RP = ƒ(VR) f = Parameter 0 5 10 15 20 V 30 VR -1 10 0 10 1 10 2 10 3 10 KOhmRp

100 MHz

1 GHz

Forward resistance rf = ƒ (IF) f = 100MHz 10 -2 10 -1 10 0 10 1 10 2 mA IF -1 10 0 10 1 10 2 10 Ohmrf Forward current IF = ƒ (VF) TA = Parameter VF -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 A IF -40 °C 25 °C 85 °C 125 °C

BA592/BA892... Isolation ISO = -|S21|2 = ƒ(f) VR = Paramter BA892-02L in series configuration, Z = 50Ω 0 0.5 1 1.5 2 GHz 3 f -30 -25 -20 -15 -10 dB |S21|2 0 V 1 V 10 V Insertion loss IL = -|S21|2 = ƒ(f) IF = Parameter BA892-02L in series configuration, Z = 50Ω 0 0.5 1 1.5 2 GHz 3 f -0.4 -0.3 -0.2 dB |S21|2 10 mA 3 mA 1 mA 0.1 mA

BA592/BA892...Package SC79

BA592/BA892...Package SCD80 Package Outline Foot Print Marking Layout (Example) ±0.11.7 0.3 marking Cathode 0.8 ±0.1 10˚MAX. ±0.10.7 ±0.11.3 0.13 ±0.05 +0.05 -0.03 ±1.5˚

0.2 M A

A±0.050.2 0.35 0.35 1.45 BAR63-02W Type code Cathode marking Laser marking 0.7 2 0.2 0.9 0.4 1.45 2.5 Standard Reel with 2 mm Pitch Cathode marking Cathode marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch) Reel ø330 mm = 10.000 Pieces/Reel 2005, June Date code

BA592/BA892... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code 1) New Marking Layout for SC75, implemented at October 2005. Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 201 3 2014 0 1 apAPapAPapAP 0 2 bqB Q bqB Q bqB Q 0 3 crC R crC R crC R 0 4 d sDSd sDSd sDS 0 5 e t ETe t ETe t ET 0 6 fuF U fuF U fuF U 0 7 gvG VgvG VgvG V 0 8 h xHXh xHXh xHX 0 9 jyJ Y jyJ Y jyJ Y 1 0 k zKZk zKZk zKZ 1 1 l 2L4 l 2L4 l 2L4 1 2 n3N5n3N5n3N5

BA592/BA892...Package SOD323

BA592/BA892...Package TSLP-2-1

BA592/BA892... Edition 2009-11-16 Published by Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com >). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.