BA592 SIEMENS | Alldatasheet
Document overview
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Technical content
Silicon RF Switching Diode BA 592 Preliminary Data
- For VHF band switching in TV/VTR tuners
- Low forward resistance, small capacitance, small inductance Maximum Ratings Type Ordering Code (tape and reel) Marking Package Pin Configuration BA 592 Q62702-A950blue S SOD-323 Parameter Symbol Values Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating temperature range Top – 55 … + 125 ˚C Storage temperature range Tstg – 55 … + 150 Thermal Resistance Junction - ambient Rth JA ≤ 450 K/W 10.94
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. Parameter Symbol min. typ. UnitValues max. Forward voltage IF = 100 mA VF V––1 Reverse current VR = 20 V IR nA––2 0 Diode capacitance f= 1 MHz VR = 1 V VR = 3 V C T pF 0.6 0.92 0.85 1.4 1.1 Forward resistance f= 100 MHz IF = 3 mA IF = 10 mA rf Ω 0.45 0.36 0.7 0.5 Reverse resistance V R = 1 V,f = 100 MHz 1/gp KΩ– 100 – Series inductance LS nH–2– Diode capacitanceC T =f (V R ) f = 1 MHz Forward resistancerf =f (IF) f = 100 MHz