BA592 INFINEON | Alldatasheet

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BA592/BA892... Silicon RF Switching Diode /G01 For band switching in TV/VTR tuners and mobile applications /G01 Very low forward resistance (typ. 0.45 /G02 @ 3 mA) /G01 small capacitance BA592 BA892/-02L BA892-02V /G31 /G32 Type Package Configuration LS(nH) Marking BA592 BA892 BA892-02L BA892-02V SOD323 SCD80 TSLP-2-1 SC79 single single single, leadless single 1.8 0.6 0.4 0.6 blue S AA AA A Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 35 V Forward current IF 100 mA Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BA592 BA892, BA892-02V BA892-02L RthJS /G01 135 /G01 120 /G01 70 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BA592/BA892... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current V R = 20 V IR - - 20 nA Forward voltage I F = 100 mA VF - - 1 V AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 0 V, f = 100 MHz CT 0.65 0.6 0.92 0.85 1.4 1.1 pF Reverse parallel resistance V R = 0 V, f = 100 MHz RP - 100 - k/G02 Forward resistance IF = 3 mA, f = 100 MHz IF = 10 mA, f = 100 MHz rf 0.45 0.36 0.7 0.5 /G02 Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3mA, RL = 100 /G02 /G03 rr - 120 - ns I-region width WI - 3 - µm Insertion loss1) IF = 0.1 mA, f = 1 GHz IF = 3 mA, f = 1 GHz IF = 10 mA, f = 1 GHz |S21|2 -0.1 -0.05 -0.04 dB Isolation1) VR = 0 V, f = 100 MHz VR = 0 V, f = 470 MHz VR = 0 V, f = 1 GHz |S21|2 -23.5 -10.5 -5.5 1BA892-02L in series configuration, Z = 50/G01

BA592/BA892... Diode capacitance CT = /G04/G05 (VR) f = Parameter 0 5 10 15 20 V 30 VR 0.4 0.8 1.2 pF CT 1 MHz ... 1 GHz Reverse parallel resistance RP = /G04 (VR) f = Parameter 0 5 10 15 20 V 30 VR -1 10 0 10 1 10 2 10 3 10 KOhmRp

100 MHz

1 GHz

Forward resistance rf = /G04 (IF) f = 100MHz 10 -2 10 -1 10 0 10 1 10 2 mA IF -1 10 0 10 1 10 2 10 Ohmrf Forward current IF = /G04 (VF) TA = Parameter VF -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 A IF -40 °C 25 °C 85 °C 125 °C

BA592/BA892... Insertion loss |S21|2 = /G04 (f) IF = Parameter BA892-02L in series configuration, Z = 50/G01 0 0.5 1 1.5 2 GHz 3 f -0.4 -0.3 -0.2 dB |S21|2 10 mA 3 mA 1 mA 0.1 mA Isolation |S21|2 = /G04 (f) VR = Paramter BA892-02L in series configuration, Z = 50/G01 0 0.5 1 1.5 2 GHz 3 f -30 -25 -20 -15 -10 dB |S21|2 0 V 1 V 10 V