BA582 SIEMENS | Alldatasheet
Document overview
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Technical content
Silicon RF Switching Diode BA 582
- For low-loss VHF band switching in TV/VTR tuners Maximum Ratings Type Ordering CodeMarking Package 1)Pin Configuration BA 582 Q62702-A829blue S SOD-123 Parameter Symbol Values Unit Reverse voltage VR 35 V Forward current,TA ≤ 60 ˚C IF 100 mA Operation temperature range Top – 55 … + 125 ˚C Storage temperature range Tstg – 55 … + 150 Thermal Resistance Junction - ambient Rth JA ≤ 600 K/W 1) For detailed information see chapter Package Outlines. 07.94
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. Parameter Symbol min. typ. UnitValues max. Forward voltage IF = 100 mA VF V––1 Reverse current VR = 20 V IR nA––2 0 Diode capacitance f= 1 MHz VR = 1 V VR = 3 V C T pF 0.6 0.92 0.85 1.4 1.1 Forward resistance f= 100 MHz IF = 3 mA IF = 10 mA rf Ω 0.45 0.38 0.7 0.5 Reverse resistance V R = 1 V,f = 100 MHz 1/gp kΩ– 100 – Series inductance LS nH– 2.8 – BA 582 Diode capacitanceC T =f (V R ) f = 1 MHz Forward resistancerf =f (IF) f = 100 MHz