BA243A NJSEMI | Alldatasheet
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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BA243A, BA244A TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon Epitaxial Planar Diode Switches for electronic band-switching in radio and TV tuners in the frequency range of 50 ... 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also small and largely independent of the reverse voltage. These diodes are delivered taped. Details see "Taping". max. 0.520 Glass case JEDEC DO-35 Weight approx. 0.13 g Dimensions in mm Absolute Maximum Ratings (T.= 25°C) Reverse Voltage Forward Current at TamB = 25 °C Junction Temperature Storage Temperature Range Symbol VR Ts Value 100 150 -55 to +150 Unit V mA Characteristics at TIM> =25 °C Forward Voltage at IF= 100mA Leakage Current at VR = 20 V atVR = 15V,T.mlJ = 60°C Dynamic Forward Resistance at f = 50 to 1 000 MHz, IF = 1 0 mA BA243A BA244A Relative Variation of Dynamic Forward Resistance with the Variation of Forward Current in the Range of IF = 2 to 40 mA Capacitance at VR = 3 V, f = 1 MHz Relative Variation of Capacitance with the Variation of Reverse Voltage in the Range of VR - 7 to 20 V, f= 100 MHz Series Inductance across Case Symbol VF rr Ar • 100 r,-AIF C,o, AC '100 "ww C -AVR 101 R Min. Typ. 0.7 0.4 2.5 Max. 0.5 1.8 Unit V nA HA n a %/mA PF %/V nH