BA01202 MITSUBISHI | Alldatasheet
Document overview
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Technical content
MITSUBISHI SEMICONDUCTOR <GaAs HBT> Preliminary BA01202 Specifications are subject to change without notice. GaAs HBT HYBRID IC
DESCRIPTION
The BA01202 is GaAs RF amplifier designed for N-CDMA OUTLINE DRAWING PCS hand-held phone. Unit : millimeters o® of FE FEATURES | | U ei High power Po=28dBm | | He! | High gain Gp=25dB @Po=28dBm 2 © By 2stage amplifier oO : Lut Internal input and output matching — bl DRT Om ow P | LI @ rin @ Pout APPLICATION m7 | ot owe Ooo N-CDMA (Spreading chip rate is 1.2288Mcps, modulation al) eS owe ow is OQPSK) hand set. ik | | ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Supply vottage of HPA | | | Pin | _inputpower | za-zi-soa | 5 [dBm | Tejon) | Operating case temp. | | 30 495 | tsig [Storage temp | 90125 *Note : Each maximum rating is guaranteed independently . ELECTRICAL CHARACTERISTICS (Ta=25°C) Symbol Parameter Test conditions* Unit | win | typ | max | [ot | Frequency | tas0 | | 1910 Total current Po=2edsm |__| 520 | | ma| Power added efficienc’ Ve1=Vc2=3.2V |. | a | - | | vef-sov |. | 25 |. | ae | ACPR_ |_ Adjacent channel power at 1.25MHz |_| -a3 | -29 | ape | Po pt a | || I-30 | a | Noise in RX band P| 140 | -138 Jeon possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as (placement of substitutive, auxiliary, circuits, (iJuse of non-flammable material or (ji)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORP. February, 01 page 1 of 1