B950A

2SB950 PANASONIC | Alldatasheet

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2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1276 and 2SD1276A n Features l High foward current transfer ratio hFE l High-speed switching l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 150 –55 to +150 Unit V V V A A W 2SB950 2SB950A 2SB950 2SB950A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO ICEO IEBO V CEO hFE1 hFE2 * V BE V CE(sat)1 V CE(sat)2 fT ton tstg tf Conditions V CB = –60V, IE = 0 V CB = –80V, IE = 0 V CE = –30V , IB = 0 V CE = –40V , IB = 0 V EB = –5V , IC = 0 IC = –30mA, IB = 0 V CE = –3V , IC = – 0.5A V CE = –3V , IC = –3A V CE = –3V , IC = –3A IC = –3A, IB = –12mA IC = –5A, IB = –20mA V CE = –10V , IC = – 0.5A, f = 1MHz IC = –3A, IB1 = –12mA, IB2 = 12mA, V CC = –50V min –60 –80 1000 2000 typ 0.3 0.5 max –200 –200 –500 –500 10000 –2.5 Unit mA mA mA V V V V MHz ms ms ms 2SB950 2SB950A 2SB950 2SB950A 2SB950 2SB950A *hFE2 Rank classification Rank Q P hFE2 2000 to 50004000 to 10000 Unit: mm Internal Connection 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0–0.2 5.5–0.2 7.5–0.2 16.7–0.3 0.7–0.1 14.0–0.5 Solder Dip 4.0 0.5 +0.2 –0.1 1.4–0.1 1.3–0.2 0.8–0.1 2.54–0.25 5.08–0.5 213 2.7–0.2 4.2–0.2 4.2–0.2 f3.1–0.1 B C E

Power Transistors 2SB950, 2SB950A PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C C ob —V CB Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (PC =2W) (1) (4) (3) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) TC =25˚C –2.5mA –2.0mA –1.5mA –1.0mA – 0.5mA – 0.4mA – 0.3mA – 0.2mA IB=–3.0mA Collector to emitter voltage VCE (V) Collector current IC (A) –10 VCE =–3V 25˚C TC =100˚C –25˚C Base to emitter voltage VBE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=250 25˚C TC =100˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 102 103 104 105 106 VCE =–3V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 100 300 1000 3000 10000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 t=1ms 10ms ICP IC 2SB950A 2SB950 Non repetitive pulse TC =25˚C DC Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) (2) (1) Without heat sink (2) With a 100 · 100 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)