2SB941 PANASONIC | Alldatasheet
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2SB941, 2SB941A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A n Features l High forward current transfer ratio hFE which has satisfactory linearity l Low collector to emitter saturation voltage VCE(sat) l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 150 –55 to +150 Unit V V V A A W 2SB941 2SB941A 2SB941 2SB941A T C =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CES ICEO IEBO V CEO hFE1 * hFE2 V BE V CE(sat) fT ton tstg tf Conditions V CE = –60V , VBE = 0 V CE = –80V , VBE = 0 V CE = –30V , IB = 0 V CE = –60V , IB = 0 V EB = –5V , IC = 0 IC = –30mA, IB = 0 V CE = –4V , IC = –1A V CE = –4V , IC = –3A V CE = –4V , IC = –3A IC = –3A, IB = – 0.375A V CE = –10V , IC = – 0.5A, f = 10MHz IC = –1A, IB1 = – 0.1A, IB2 = 0.1A min –60 –80 typ 0.5 1.2 0.3 max –200 –200 –300 –300 250 –1.8 –1.2 Unit mA mA mA V V V MHz ms ms ms 2SB941 2SB941A 2SB941 2SB941A 2SB941 2SB941A Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. *hFE1 Rank classification Rank Q P hFE1 70 to 150 120 to 250 Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0–0.2 5.5–0.2 7.5–0.2 16.7–0.3 0.7–0.1 14.0–0.5 Solder Dip 4.0 0.5 +0.2 –0.1 1.4–0.1 1.3–0.2 0.8–0.1 2.54–0.25 5.08–0.5 213 2.7–0.2 4.2–0.2 4.2–0.2 f3.1–0.1
Power Transistors 2SB941, 2SB941A PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (PC =2W) (1) (4) (3) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) TC =25˚C –80mA –60mA –40mA –30mA –20mA –12mA –8mA –4mA –16mA IB=–100mA Collector to emitter voltage VCE (V) Collector current IC (A) –10 TC =100˚C 25˚C VCE =–4V –25˚C Base to emitter voltage VBE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 25˚C –25˚C TC =100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 100 300 1000 3000 10000 VCE =–4V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 100 300 1000 3000 10000 VCE =–5V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 10ms t=1ms ICP IC 2SB941A 2SB941 Non repetitive pulse TC =25˚C DC Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) (2) (1) Without heat sink (2) With a 100 · 100 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)