B892

2SB892 SANYO | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Ordering number: EN 930C No.930C 2SB892/2SD1207 S. ANYO PNP/ NPN Epitaxial Planar Silicon Transistors Large-Current Switching Applications APPLICATIONS : : + Power supplies, relay drivers, lamp drivers, and automotive wiring FEATURES : + FBET and MBIT processed (Original process of SANYO) + Low saturation voltage + Large current capacity and wide ASO Values for 2SB892 shown in( ) ABSOLUTE MAXIMUM RATINGS/Ta=25°C unit Collector to base voltage Voso (-)60 Vv Collector to emitter voltage VcEO {-)50 Vv Emitter to base voltage Veso {-)6 v Collector current Io {-)2 A Collector Current(Pulse) Igp (-)4 A Allowable collector dissipation Po 1 WwW Junction temperature Tj 150°C Storage ambient temperature Tstg —55~+150 °C ELECTRICAL CHARACTERISTICS/Ta=25°C min typ max unit Collector cut-off current logo Vep(-)50V, |p=0 (-)0.1 pA Emitter cut-off current leBo Veg@(-)4V, t=O (-)0.1 BA = DC current gain hee(t)* — Vog=(-}2V, Ig=(~)100mA 100 560 heg(2) — Vog=(-2V, Ig=(-11.54 40 Gain-bandwidth product fr Veen (-10V, 1g=(—)50mA 150 MHz Output capacitance Cob Vp=(—)10V, f= 1MHz 12 pF (22) pF Collector-emitter saturation voltage VoE (sat) Ior(-A, 1g=(-)50mA 0.15 80.4 Vv {—0.3) (—0.7) Vv Base-emitter saturation voltage VBE (sat) Io=(-)1A, Ig=(-)50mA {-)0.9 (-)1.2 v Collector-base breakdown voltage Vigrycgo !o=(—)10HA, I_=0 (-)60 v Collector-emitter breakdown voltage Vigryceg !¢=(-)1mA, Rge= (-)50 v Emitter-base breakdown voltage = Vigryego !p=(-) 10HA, Io=0 (16 v “ 258892 and 2SD1207 are graded as follows by beg at 100mA:

100 R 200} 140 S 280 | 200 T 400

Package Dimensions 2006 ia os (unit: mm) tt ed Ete Pe) =r) z= a | - | las %0. bgt | EIAJ: SC-51 B: Base | SANYO: MP C: Collector : E: Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4067KI/3145KI/ No.930-1/4

1200 Te = Voe 1200 1c ~ Vee i

• | < rm : a eae A 0-20 |p Lm (— watt Ew | Pier a | °o <2 ke "oa “ 6 @ 0 W2 Collector-emitter voltage, Voe-V Collector-emitter voltage, Vor -V wae Ic - VCE ae I¢- Vee <q -20 + < 20 f sos oe nl Wome) Soe Pur A “es +—— 2 16 L> L ; | go-1 Sa E12 5 -o8 Ly £ os L a °o 04-08-12 16 20 24 °9 0a 08 1282 Collector-emitter voltage, Vog — V Collector-emitter voltage, Voge — V = 1200 Ic - Vee 200 Ic > VBE || 288392 | | 21207 < — 1000 Vop= — 2 F ‘000 Yee av LL -am * eco — ¢ > 5 al | Jf | aa) L 5 400 5 400 ; oe oe [ °% 0.4 04 =06 “05 =1.0 =1 °o 02 OL 08 0.8 1.0 12 Base-emitter voltage, Vee -Vv Base-emitter voltage, VBE -V seco hre - Ic oo hre = Ic E-}4-E-+--H 288892 HAHA] 7301907 ESET) cre op £ £ ee Ne NN Bo Ft Py Tr AT? gy E g tt TTT TP iv Bf TPE A go i TPE g Lilt TT ttl 71000 °o 27 S7Tw 2 3 57m 2 35 Collector current, 1¢ — mA Collector current, Iq — mA ee OO No.930-2/4 eer

w Hee] H+ \\ LET Tt ei I + HHH [i Ti 6g J TT Try Ty rr PDN TRO

8 AT ot mama

: a Hh {tJ 3 2 tT TTT yy rr st tid My se Lit 5 o I o # I 1 10 100 4000, ~ Collector current, Io - mA” Collector current, 'o —mA Cob - VCR Cob - YCB s ‘0 1} 88Di207 Oe). peg heed | il ! 'g tt ‘2 TP pepo | rt & B ~X be cs) a Pp ° fs) Peet _ i 4 a - 100 ' Collector to base voltage, Vop -V Collector to base voltage, Vog — V Vee(sat) - Ic >" gee ~ te — z> 1° 253872] & Lt zr gt -° JPRS Re ow 3.0 SI Po c=7 ae i | SoH i Fg a Coo 3; 5 am 5 “EPs 5 5 Be J Pe Tee Boa — | Pw eg st pet 5° = ; ae # CHES Pcp 2 eee fy Tt 2 _ ~ * collecter current, Ion mA Collector current, Ig — mA Pc -Ta ASO 2" TSB892/ 250 1207 “Del LL] anions] 7 3 ¢ pe ANE = x » OSTOOO TENET oO 2, N e™ NS CON TERT B ww NI g Pte \\— Patt, |! NE] 3 ae = 20 BL TING] hacetaerawonerraromr 1 °F 0 C7) Co Cy 100 120 140 160 a + 10 Vv -y 100, Ambient temperature, Ta — °C Collector to emitter voltage, Veg ~No.980-3/4

2$B892/2SD1207 ; WNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property joss.

1 Anyone purchasing any products described or contained herein for an above-mentioned use shall:

© Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.930-4/4