2SB827 SANYO | Alldatasheet

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No.688G_/ 2SB827/2SD1063 S. ANYO / PNP/NPN Epitaxial Planar Silicon Transistors | 50V/7A Switching Applications Use : Universal high current switching as solenoid driving, high speed inverter and converter, Features : - Low saturation voltage : Vcg(sat)=(-)0.4V max. . Wide ASO. (_) shows the case of 2SB827 only. “Absolute Maximum Ratings at Ta=25°C Collector-to-Base Voltage Vcso (-)60 v Collector-to-Emitter Voltage VcEo (~)50 Vv Emitter-to-Base Voltage Vago (-)6 Vv Collector Current Ic (-)7 A Collector Current(Pulse) Top (-)14 A Collector Dissipation Po To=25°C 60 Ww Junction Temperature T3 150 °c Storage Temperature Tstg -55 to +150 °c Electrical Characteristics at Ta=25°C min typ max unit Collector Cut off Current Icgo Vop= (-) 40V,Ip=0 (-)0.1 mA Emitter Cut off Current IEBO Vep=(-) 4V,I¢=0 (-)0.1 ma DC Current Gain hrg (1) Veg=(-)2V,Ic=(-)1A 70* 280* hep (2) Vcg=(-)2V,Ic=(-)5A 30 Gain Bandwidth Product fp Vep=(-)5V,Ic=(-) 1A 10 MHz C-E Saturation Voltage VcE(sat) Ic=(-)4A,Ip=(-)0.4a (-)0.4 Vv C-B Breakdown Voltage V(BR)CBO Ic=(-)1mA,Tp=0 (-)60 v C-E Breakdown Voltage V(BR)CEO Ic=(~)1mA,RgE=co (~)50 v E-B Breakdown Voltage V(BR)EBO Ig=(~) 1mA,T¢=0 (-)6 Vv Turn-on Time ton At the test circuit 0.2 ps Fall Time te At the test circuit (0.1)0.3 ps Storage Time tstg At the test circuit (0.7)0.9 ps *:The 2SB827/2SD1063 are classified by 1A hrg as follows:

100 R 200 | 140 s 280

Switching Time Test Circuit JL Tat our Package Dimensions 2022 IN 1 7 (unit:mm) =20ps “in 2.0 Ceeettsne | gyn? © 1

50 Qa22 FF rg

| yp ag oie * . 9 | g pe | gin hr 15.0 ate 70.0—+| Holt lO1BI=—10Tp2=Io=2A 4 ) eB: Bnitter are €: Collector (For PNP, the porality is reversed.) re a ae B: Base . i 3 SANYO: TO3PB Unit (Resistance : 2, Capacitance : F) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN | 4027KI/6221KI No.688-1/3

2SB827/2SD1063 : =12 “Ic - Vee 2 Te = Vee 288827 1 2801063, &. eT Let aan <9 ™, Sioa “o s os . a Ze | Yose | | | N68 ie 200008 38 I — i WY a 4 = 60mA, Bs Y i = Son Be fo 4OmA Ee = Leanne | a a Tg=0 Ig=0 % 02 —-04 ~06 -08 -10 -12 0 -14 iy 02 04 06 08 1.0 12, 14 Coliectorsto-Emitter Voltage, Vc - V Collector-to-Emitter Voltage,VcE - V “12 Ty = VBE 2 Te = Vee — < | { 0 + i “10 -s — % dt | 5e oe a d / a joc | : a i ° or -0s 06 -08 10-12 14 % e204 06 08 10) O12 Base-to-Emitter Votlage,Vgp - V Base-to-Emitter Voltage ,Vpg - V. hee = Ic bre - Ic m0 0 9801088 Pg ee ea ae a & coh ee cy Se A eee Tore og, EP 3s 7-7} — ca pert ra {i} gS Se

2 Y §

on Pity) 3, Ran

3 SES 2 a

11} re ee a i | tH pitt ttt 1 PTT Pry PE yy | Poy | PTT) Heda ~Callector current ,I¢ -a Collector Current,I¢ - A” Py Vce(sat) - Ic > 0 Vce(sat) - Ic Fe 2 4 sO | e PPP Pe er ee ee Se OO 'S Pa Oe 74 3 TO ere A 8p UP AA eA Se eee oe ee ‘A ee A fo pea et es eet B See cc) «6g EERE Coro] Be fot a io “0.4 1.0 =10 i oot O41 10 vn ° Collector. Current,Ig’- A & Collector Current,T¢ = A No .688-2/3

2SB827/2SD1063 . SSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSssSs Aso ASO qf 20927 TP TT TT 2801063 | Tl. Titil « cee {| I Tor | ry at TY) *y,/CCI aN o tpi TAN Tt] 1 Or SEAN a a gt TTT TSN [I Q gs tT TINA Po @€ifP Py Tr ee eee NN an fF {itt TT Tr ras PT si] ] i PWR mae ANG eps St HEE Et aN g 2 a PANN Fe ee ANE 8 PPP TT AWN TI rH ‘ ajo yi ype I sai] Tri + NH 3 . ' . \\ q TON 0 2 Asingle pulse at the rating 8 asingle pulse at the rating— am -o1f2f1ms_* to 100ms oxfOf ims to 100ns mia “10 7 10 10 " 10 10 700 Collector-to-Emitter Voltage,VcE - V Collector -to-Emitter Voltage, Vce - V PC - Te ee 1 69 gy IN ics IN g 50) § . IN TET a a0 ~ to | TINT TI x 20] : NL 0 AS sf) PNG ° N °5 20 40 oo Ce mH 140 160 Case Temperature,Te - °C WNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. MI Information (including circuit diagrams and circuit parameters) herein is for example only: it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights ‘of third parties. No .688-3/3