DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
www.roithner-laser.com 1 B5M-447-380S
- Ultraviolet Light Emitting Diode
- 380 nm, 100 mcd
- InGaN structure
- 5 mm epoxy package Maximum Rating (TCASE = 25°C) Parameter Symbol Values Unit Min. Max. Power Dissipation, DC PD 120 mW Pulse Forward Current* IFP 100 mA Reverse Voltage VR 5.0 V Operating Temperature TOPR - 40 + 85 °C Storage Temperature TSTG - 40 + 100 °C Soldering Temperature (max 3s) TSOL + 260 °C * Duty cycle = 10% @ 1 kHz Electro-Optical Characteristics (TCASE = 25°C, IF = 20 mA) Parameter Symbol Values Unit Min. Typ. Max. Peak Wavelength λP 380 nm Spectral Width (FWHM) ∆λ 30 nm Forward Voltage VF 2.8 3.6 V Reverse Current (VR = 5V) VR 10 µA Luminous Intensity IV 50 100 mcd Viewing Half Angle Ө1/2 7.5 deg. All dimensions in mm
Description
B5M-447-380S is a n InGaN based UV LED, typically emitting at 38 0nm with a luminous intensity of 100 mcd. It comes in a hermetically sealed clear 5 mm epoxy resin. rev.1.0 29.02.16
www.roithner-laser.com 2 Performance Characteristics Forward Current vs. Forward Voltage Relative Luminous Intensity vs. Forward Current Relative Luminous Intensity vs. Ambient Temp. Allowable Forward Current vs. Ambient Temp. Relative Luminous Intensity Relative Luminous Intensity vs. Wavelength © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice