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SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOD-123 封装二极管/SOD-123 Plastic-Encapsulate Diodes B5817W/B5818W/B5819W (SCHOTTKY DIODES) 特点/Features： 正向导通电压低； 用途/Applications： 低压、高频等保护电路。 印章/ Marking: B5817W: SJ B5818W: S K B5819W: S L 极限参数/Absolute maximum ratings(Ta=25℃) Parameter Symbol B5817W B5818W B5819W Unit Non-Repetitive Peak Reverse Voltage VRM 20 30 40 Peak Repetitive Peak Reverse Voltage Working Peak DC Blocking Voltage VRRM VRWM VR 20 30 40 V RMS Reverse Voltage VR(RMS) 14 21 28 V Average rectified output current IO 1 A Peak Forward Surge Current(@t≤8.3mS) IFSM 9 A Repetitive Peak Forward Current IFRM 1.5 A Power Dissipation Pd 500 mW Thermal Resistance Junction To Ambient RθJA 200 ℃/mW Storage Temperature Tstg -55～150 ℃ 电性能参数/Electrical characteristics (Ta=25℃) 参数/Parameter 符号 测试条件 最小值 典型值 最大值 单位 Reverse Breakdown Voltage B5817W B5818W B5819W V(BR) IR=1mA V Forward Voltage VF IF=1A B5817W B5818W B5819W 0.45 0.55 0.6 V IF=3A B5817W B5818W B5819W 0.75 0.875 0.9 V Reverse voltage leakage current B5817W B5818W B5819W IR VR=20V VR=30V VR=40V 1 mA Diode Capacitance CD VR=4V,f=1.0MHz 120 pF
SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOD-123 封装二极管/SOD-123 Plastic-Encapsulate Diodes 典型特性曲线图/Typical Characteristics