B5817W HDSEMI | Alldatasheet
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H igh Diode Semiconductor SOD1 23 Marking B5817 W Schottky Rectifier Low Voltage Rectification Low Power Consumption Applications High Efficiency DC/DC Conversion V R 20V I FAV Electrical Characteristics (T =25℃ Unless otherwise specified） a SJ HD SD0.63 Parameter Symbol Value Unit DC reverse voltage VR 2 V Mean rectifying current IO 1 A Non repetitive Pe ak Forward Surge Current @ t=8 .3ms I FSM A Power Dissipation P D W Thermal Resistance from Junction to Ambient R θJA 285 Junction Temperature T J Storage Temperature T STG +150 Parameter Symbol Test Condition Min Type Max Unit Reverse voltage V BR I R 250µ A V Forward voltage V F I F 0.5A 0.37 0.40 V I F 1.0A 0.42 0.45 V I F 3.0 A 0.62 0.75 V Reverse current I R V R 20V µ A Diode capacitance C D VR=4V, f=1MHz pF
H igh Diode Semiconductor Typical Characteristics 0.01 0.1 Ta =25℃ Ta =100℃ Forward Characteristics FORWARD CURRENT IF (A) FORWARD VOLTAGE VF (V) 0 5 10 15 20 25 1E-3 0.01 0.1 T a =25℃ T a =100℃ REVERSE CURRENT IR (mA) REVERSE VOLTAGE VR (V) Reverse Characteristics 120 160 200 CAPACITANCE BETWEEN TERMINALS C T (pF) REVERSE VOLTAGE V R (V) Capacitance Characteristics Ta=25 f=1MHz 0 25 50 75 100 125 100 150 200 250 300 350 400 POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta (℃) Power Derating Curve
H igh Diode Semiconductor Package Outline Dimensions SOD-1 23 Suggested Pad Layout SOD-1 23
Reel Taping Specifications For Surface Mount Devices-SOD123 H igh Diode Semiconductor 1.50