B5817W BAIDUMICRO | Alldatasheet
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Technical content
SOD-123 Plastic-Encapsulate Diodes B5817W-5819W SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ B5818W:SK B5819W: SL Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol B5817W B5818W B5819W Unit Non-Repetitive Peak Reverse Voltage V RM 20 30 40 V Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 20 30 40 V RMS Reverse Voltage V R(RMS) 14 21 28 V Average Rectified Output Current I O 1 A Peak Forward Surge Current @t=8.3ms I FSM 9 A Repetitive Peak Forward Current I FRM 1.5 A Power Dissipation Pd 500 mW Thermal Resistance Junction to Ambient R θJA 250 ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions M in M ax Unit Reverse breakdown voltage V (BR) I R = 1mA B5817W B5818W B5819W V Reverse voltage leakage current I R V R =20V B5817W V R =30V B5818W V R =40V B5819W mA B5817W I F =1A I F =3A 0.45 0.75 V B5818W I F =1A I F =3A 0.55 0.875 V Forward voltage V F B5819W I F =1A I F =3A 0.6 0.9 V Diode capacitance C D V R =4V, f=1MHz 120 pF SOD-123 ℃/W Storage Temperature T STG - 55~+150 ℃ Junction temperature TJ 125 ℃ BAIDU MICRO ELECTRONS CO., LTD.
0.1 1 10 100 1000 0 25 50 75 100 125 150 100 200 300 400 500 600 0.1 0 1 02 03 04 0 1E-3 0.01 0.1 T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Forward Characteristics T a =100 T a =25 FORWARD CURRENT I F (A) FORWARD VOLTAGE V F (V) Reverse Characteristics T a =100 T a =25 REVERSE CURRENT I R (mA) REVERSE VOLTAGE V R (V) B,Jul,2012 SOD-123 Plastic-Encapsulate Diodes BAIDU MICRO ELECTRONS CO., LTD. B5817W-5819W