ES1A BAIDUMICRO | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
FEATURES
- Super fast switching time for high efficiency
- Low forward voltage drop and high current capability
- Low reverse leakage current
- Plastic material has UL flammability classification 94V-0 MECHANICAL DA TA
- Case： Molded Plastic
- Polarity: lndicated by cathode band
- Weight: 0.002 ounces,0.064 grams
- Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL ES1A ES1B ES1D ES1G ES1J UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 V Maximum RMS Voltage VRMS 35 70 140 280 420 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 V Maximum Average Forward Rectified Current @TA=55 ℃ Peak Forward Surage Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) Peak Forward Voltage at 1.0A DC VF 1.25 1.70 V Maximum DC Reverse Current @TJ=25℃ at Rated DC Blocking Voltage @TJ=100℃ Maximum Reverse Recovery Time(Note 1) TRR nS Tyical Junction Capacitance (Note2) CJ pF Tyical Thermal Resistance (Note3) RθJA ℃/W Operating Temperature Range TJ ℃ Storage Temperature Range TSTG ℃ 0.95 2530 100 ES1A thru ES1J A SURFACE MOUNT GLASS SUPERFAST RECOVERY RECTIFERS REVERSE VOLTAGE - 50 to 600 Volts FORWARD CURRENT - 1.0 Amperes 30IFSM A Dimensions in inches and (millimeters) I(AV) 1.0 2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC 3.Thermal resistance junction of ambient. NOTES: 1.Measured with IF=0.5A, IR=1A, IRR=0.25A -55 to +150 -55 to +150 μAIR 5.0 百度微电子有限公司 BAIDU MICRO ELECTRONS CO., LTD. .030(0.76) .060(1.52) .103(2.62) .079(2.00) .188(4.80) .208(5.28) .008(.203) .002(.051) .006(.152) .012(.305) .157(4.00) .181(4.60) .098(2.50) .039(1.00) SMA(DO-214AC)
FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT NUMBER OF CYCLES AT 60Hz PEAK FORWARD SURGE CURREN T AMPERE S PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE (JEDEC METHOD) 2 5 10 20 50 100 FIG. 1 – FORWARD CURRENT DERATING CURVE AMBIENT TEMPERATURE (℃) AVERAGE FORWARD CURREN T AMPERE S 0.4 0.2 0.6 0.8 1.0 50 75 100 125 150 175 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD FIG.3 – TYPICAL JUNCTION CAPACITANCE CAPACITANCE (pF REVERSE VOLTAGE ,VOLTS 100 4 10 100 TJ = 25°C f = 1 MHz ES1G-ES1J ES1A - ES1D FIG.4-TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS FORWARD VOLTAGE ,VOLTS 1.0 0.1 100 TJ = 25°C PULSE WIDTH 300us ES ES ES1A -ES1D ES1A thru ES1J 百度微电子有限公司 BAIDU MICRO ELECTRONS CO., LTD.