2sb544 SANYO | Alldatasheet
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Ordering number: EN 199) _ 2SB544/2SD400 [Eee a PNP/NPN Epitaxial Planar Silicon Transistors | SOP RTS oe Low-Frequency Power Amp, [eae Electronic Governor Applications (): 28B544 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vezo (-)25 V Collector to Emitter Voltage Vero (-)25 v Emitter to Base Voltage VeBo (5 Vv Collector Current Ic (- A Collector Current(Pulse) Icp (-)2 A Collector Dissipation Po 900 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta=25°C min typ. max_ unit Collector CutoffCurrent Icgo Vop=(—)20V,lg=0 (-)L0 pA Emitter Cutoff Current ego Vep=(—)4V,l¢=0 (1.0 pA DC Current Gain hpg(1) Vor=(—)2V,1o=(—)50mA 60% 560% hpg(2) Vor=(—)2V,I¢=(—-)1A 30 Gain-Bandwidth Product fp Vor=(—)10V,I¢=(—)50mA 180 MHz Output Capacitance cob Vop=(—)10V,f=1MHz (25) pF C-ESaturation Voltage Vogisat) — Ic=(—)500mA,Ig=(—)50mA (-0.15) (-0.7) Vv 01 03 B-E Saturation Voltage Vpgyat) I= (—)500mA,Ig=(—)50mA (=)0.85 (-2 0 -V C-BBreakdown Voltage Viprcso I¢=(—)10HA,Ip=0 (—)25 v _ C-E Breakdown Voltage Vipryceo Ie=(—)1mA,Rpg=° (—)25 v = E-BBreakdown Voltage Visreso Ig=(—)10pA,Ic=0 (5 v => x: The 29B544/2SD400 are classified by 50mA hrg as follows : =
60 D 120 | 100 E 200 | 160 F 320 | 280 G 560
(unit: mm) Py 0.5 t ii =) ra leet 8.5- %.0- BIAS: SC-S1 Bs Base ‘SANYO: MP C1 Collector E: Emitter Specifications and information herein are subject to change without notice SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4280MO/5157AT/D174MW,TS No.199-1/3 MM 7997076 OO15716 145 253
a eT ‘re eer «| Zeer ees A ee 2688S = ee 2a Jad Pa ee ee i Upeerr ibe TP) Pee er | 2 fT ae er | A oc Aaa Collector to Emitter Veltege,Vex V - Collector to Emitter Voltage.Vop — V a
16 Ic — Vee — Io = Vee
adeew TT TT | fee 7 TTT j is} gd 1 | | UT] =.) | fT tT yyyT 0.2 0.2) Base to Emitter Voltage,Vag — V Base to Emitter Voltage,Vpg — V 5 hee — Ic 5 hre — Ic fiend | [LT TT | few IT TTT TTT ; EER SRY : SS) Ae | fel Coe eS |g ERR ee ee ee E sit TT TTT TT tT EsLit Tritt Tri | g g sit TTT TT |g ST TT Tn TOT “Slaw 23°57 5,2 3 5 749 2 STaa 23°57 9; 23 5?q9 2 Collector Currentlg — A ° Collector Corzentle =A fr- Ic 3 —lc s 2s -LI EIT) . ee TTT TTT tele I LU er Sel LL ttt ert) POE re a 45 5} 5 eit T Uy Ty PITT TTT TTT) 2] AaLLITTT TTT og DT 2 ? & ee : " 79.01 2 3 57-0) 23 5 7-00 “Some 701 2 3 58 740 | Collector Current, — A Collector Current,lg — A
254 Mm 7997076 0015717 O85
100 Cob — Vea 00 cob ~ Vee
fie TT TT TT] pete TT TTT Td % Ht tr ai it Tt TPT PLO eN ePP g mm @ aiit TP PPA eS SECT cr ers i LLL LLIN e‘TTT TTT 1 eT oS So 7 7 Peet HHH Li] Tt Tit Ty | 5 7-10 2 3 8 7 = a3 8 7 10 2 3 +5 7 0 203 Collector to Base Voltage,Voy — V Collector to Base Voltage, Vcg — V ; Ce oo ee oo [eee Ty ‘[ietenioy | ae a Bere) ee i HA eet Ret a) OC oS a yO TAA C7] 38 ooo ff 23 (CO eee ee tit ArT ) o4s cane am [TT ss att ba) es oe S.A TT) a eer
88 OTT eee) 88 ®t
Fy A A a | Fa A S$ 7-0.01 0.1 =1.0 5 7 0.01 5? 01 23 10 2 Collector Current,lg — A Collector Current,g — A
10 Vee(sat) — Ic 0 Vee(sat) - Ic
1 Pa et 7 ie == be
steer TT TT > peer eit TPT TT os = TTT Sit TT itt Tr ty | (TCE Cor 35-10 _—_s BS 1.0 bboy és 4] = — oe JS -—— ae Se (Reet) PO) so Re gs es 5 BY PP) & Ht TET | Collector Currentlc — A Collector Currentic — A ASO Pe - Ta $[eseeaarasoaoo TTT pa 388544 / 250400 = SON | | 885847258400 ewlet | TAL] ese z¢ r oes SO a 2, NV 2 wt NS 5 | | Nel m\\ ga. | IN TT sf TT RP NE] fee NG rT zo Cl NIL Sm | | Tt PK TT Shae oke IN L| ia _| | PT PIN Ty Single piso na NT Sy | Pt INT For ’, minus sign is omitted. og Collector to Emitter Voltage,Ver — V Ambient Temperature,Ta = —_ mm 7997076 0015718 Th) y-1-1
= CASE OUTLINES OF LEAD FORMED SMALL SIGNAL TRANSISTORS & @ All of Sanyo lead formed small signal transistor case outlines are illustrated below. a @ All dimensions are in mm, and dimensions which are not followed by min, or max. are represented by — typical values. x @No marking is indicated. = _|Case Outline 20034/2003B (unit : mm) Case Outline 2019A/2019B (unit : mm) : 20 0.46 20 ou : ry] 0.45 i 45 i = we ° vs 2 = ie] - 045 | c Cet, lao 5.0. 14.0 —a 4.0: a . JEDEC :TO-92 1: Source JEDEC :TO-82 1: Emitter BIAS :SC-43. 2: Gate * . BIAS :SC-43 2: Collector : [Deal a SANYO (NE a pole SANYO :NP 3: Drain © | Case Outline 2004A (unit: mm) Case Outline 2033 (unit : mm) : 20 0.44 22 xs r| 0.45 | Pop | ry Ty Et: (2 PS 8 as = (78? “LEE EE 1H =" a7 dh ee Ut ‘i s . ht, _| leo 1:Bmitter °* : JEDEC :70.92 1:Base 2: Collector ‘ BIAJ — :SC-43 2: Emitter 3: Base SANYO : NP 3: Collector SANYO: SPA Case Outline 2005 (unit: mm) Case Outline 2034/2034A (unit : mm) 2.0 046 0 ba ae 2 Lee : it 045 C | on 4 30 16.0 4.0: s Oe = - 1:Souree ‘ JEDEC : 0-92 1:Drain 2:Gate BIAS :80-43 a Source 3: Drain : SANYO : NP : SANYO: SPA : Case Outline 2006A (unit: mm) Case Outline 2040 (unit : mm) cy : 30 5 . ry “i r a 15.0 | ry TF q re SST: [PR oes 3 3 Qh =a |" 5 ica 4 1h eee? Ly Os 3 loss 4.0: nel 1:Drain *
5 EIAJ__ : SC-51 1; Emitter 2: Source
SANYO : MP 2: Collector 3:Gate 3: Base SANYO: SPA 16 mm 7997076 0015489 525 mm
Case Outline 2061 (unit: mm) ae 2.0, 0.46 = 0.45 oeo 048 uo hese 14.0 _ wal oa JEDEC :'T0-92 1: Emitter as EIAJ — :SC-43 2: Base eh SANYO : NP 3: Collector ie Case Outline 2064 (unit: mm) 4 p23. nae ay the ce Case Outline 2084A (unit: mm), ae Pee aS Healer Ey 23d joins shwvo:eur bee mm 7997076 0015490 240 mm 17 E: