2SB1645 PANASONIC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Silicon PNP triple diffusion planar type Darlington For power amplification I Features

  • Satisfactory forward current transfer ratio hFE characteristics
  • Wide area of safe operation (ASO)
  • Optimum for the output stage of a HiFi audio amplifier I Absolute Maximum Ratings TC = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO −160 V Collector to emitter voltage V CEO −160 V Emitter to base voltage V EBO −5V Peak collector current I CP −15 A Collector current I C −8A Collector power TC = 25°CP C 100 W dissipation Ta = 25°C3 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C I Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = −160 V, IE = 0 −100 µA ICEO VCB = −160 V, IE = 0 −100 µA Emitter cutoff current I EBO VEB = −5 V, IC = 0 −100 µA Collector to emitter voltage V CEO IC = −10 mA, IB = 0 −160 V Forward current transfer ratio h FE1 VCE = −5 V, IC = −1 A 500 hFE2 * VCE = −5 V, IC = −7 A 3 500 15 000 Collector to emitter saturation voltage V CE(sat) IC = −7 A, IB = −7 mA −3V Base to emitter saturation voltage V BE(sat) IC = −7 A, IB = −7 mA −3V Transition frequency f T VCE = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz Turn-on time t on IC = 7 A, IB1 = −7 mA, IB2 = 7 mA 1.0 µs Storage time t stg VCC = −50 V 1.5 µs Fall time t f 1.2 µs Note) *: Rank classification Rank P Q hFE2 5 000 to 15 000 3 500 to 10 000 15.5±0.5 3.0±0.3 (4.0) 2.0±0.2 1.1±0.1 5.45±0.3 0.7±0.1 5° 5° 10.9±0.5 (10.0)(1.2) (2.0) Solder Dip3.3±0.3 5.5±0.3 (2.0) 26.5±0.5 (23.4) 22.0±0.5 18.6±0.5 (2.0) φ 3.2±0.1 (4.5) 1: Base 2: Collector 3: Emitter Internal Connection B C E

PC  Ta Area of safe operation (ASO) 100 120 0 20 40 60 80 100 120 140 160 (1) (2) (3) (1) TC = Ta (2) With a 100 × 100 × 2 mm3 Al heat sink (3) Without heat sink Ambient temperature Ta (°C) Collector power dissipation PC (W) − 0.001 − 0.01 − 0.1 −10 −10 −100 −1 000 −100 ICP IC t = 1 s t = 10 ms t = 1 ms Non repetitive pulse TC = 25°C Collector current IC (A) Collector to emitter voltage VCE (V) VCEO max.