B1548

2SB1548 PANASONIC | Alldatasheet

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2SB1548, 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 and 2SD2374A n Features l High forward current transfer ratio hFE which has satisfactory linearity l Low collector to emitter saturation voltage VCE(sat) l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. Unit: mm 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package 9.9–0.3 15.0–0.513.7–0.2 4.2–0.2 4.6–0.2 2.9–0.2 0.8–0.1 1.4–0.2 f3.2–0.1 2.6–0.1 0.55–0.15 2.54–0.3 5.08–0.5 3.0–0.5 1.6–0.2 *hFE1 Rank classification Rank Q P hFE1 70 to 150 120 to 250 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 150 –55 to +150 Unit V V V A A W 2SB1548 2SB1548A 2SB1548 2SB1548A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICES ICEO IEBO V CEO hFE1 * hFE2 V BE V CE(sat) fT ton tstg tf Conditions V CE = –60V , VBE = 0 V CE = –80V , VBE = 0 V CE = –30V , IB = 0 V CE = –60V , IB = 0 V EB = –5V , IC = 0 IC = –30mA, IB = 0 V CE = –4V , IC = –1A V CE = –4V , IC = –3A V CE = –4V , IC = –3A IC = –3A, IB = – 0.375A V CE = –10V , IC = – 0.5A, f = 10MHz IC = –1A, IB1 = – 0.1A, IB2 = 0.1A min –60 –80 typ 0.5 1.2 0.3 max –200 –200 –300 –300 250 –1.8 –1.2 Unit mA mA mA V V V MHz ms ms ms 2SB1548 2SB1548A 2SB1548 2SB1548A 2SB1548 2SB1548A

Power Transistors 2SB1548, 2SB1548A PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) Without heat sink (PC =2W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) TC =25˚C –80mA –60mA –40mA –30mA –20mA –16mA –12mA –8mA –4mA IB=–100mA Collector to emitter voltage VCE (V) Collector current IC (A) VCE =–4V TC =25˚C Base to emitter voltage VBE (V) Collector current IC (A) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 IC /IB=10 TC =25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 100 300 1000 3000 10000 VCE =–4V TC =25˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 0.3 100 300 1000 VCE =–10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 ICP IC 10ms t=1ms Non repetitive pulse TC =25˚C DC Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) (2) (1) Without heat sink (2) With a 100 · 80 · t2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)