2SB1274 SANYO | Alldatasheet

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Technical content

Features

  • Wide ASO (Adoption of MBIT process).
  • Low saturation voltage.
  • High reliability.
  • High breakdown voltage.
  • Micaless package facilitating mounting. Specifications ( ):2SB1274 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (−)60 V Collector-to-Emitter Voltage V CEO (−)60 V Emitter-to-Base Voltage V EBO (−)6 V Collector Current I C (−)3 A Collector Current (Pulse) I CP (−)8 A Collector Dissipation P C Tc=25°C2 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)40V, IE=0 (- -)100 µA Emitter Cutoff Current I EBO VEB =(- -)4V, IC =0 (- -)100 µA Continued on next page. 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Package Dimensions unit : mm 2041A [2SB1274/2SD1913] D2000 TS IM 8-2055 PNP/NPN Epitaxial Planar Silicon Transistors 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 1.6 1.2 0.75 14.0 16.0 10.0 18.1 5.6 3.2 7.2 3.5 2.552.55 2.4 4.5 2.8 0.7 2.552.55 2.4 1 23 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

No.2246-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit DC Current Gain hFE 2V CE =(- -)5V, IC =(- -)3A 20 Gain-Bandwidth Product f T VCE =(- -)5V, IC =(- -)0.5A 100 MHz Output Capacitance Cob V CB =(- -)10V, f=1MHz (60)40 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)2A, IB=(- -)0.2A (- -)0.4 (- -)1 V Base-to-Emitter Voltage V BE VCE =(- -)5V, IC =(- -)0.5A (- -)0.8 (- -)1 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)1mA, IE=0 (- -)60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =5mA, RBE =∞ (- -)60 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)1mA, IC =0 (- -)6 V * : The 2SBB1274 / 2SD1913 are classified by 0.5A hFE as follows : Rank QR S hFE 70 to 140 100 to 200 140 to 280 IT02818 IC -- VBE --2.0 --2.4 --1.6 --1.2 --0.4 --0.8 --2.8 --3.2 --3.6 2SB1274 V CE = --5V IT02819 IC -- VBE Base-to-Emitter V oltage, VBE -- V 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.6 3.2 2SD1913 V CE =5V IT02816 IC -- VCE --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 IB =0 --10mA --5mA --20mA --25mA --35mA --50mA --45mA --40mA --30mA --15mA IT02817 IC -- VCE Collector-to-Emitter V oltage, VCE -- V 02 14 35 6 0.5 1.0 1.5 2.0 2.5 3.0 IB =0 2SB1274 2SD1913 10mA 15mA 20mA 50mA 25mA 40mA 45mA 30mA 5mA 35mA Ta=120 --40 °C Ta=120 --40 Collector Current, IC -- A Collector Current, I C -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A

No.2246-3/4 IT02824 VCE (sat) -- IC --0.127 --0.01 35 --1.072 3 2 3 57 5 --0.01 --0.1 --1.0 Ta= 120 --40 25°C Base-to-Emitter Saturation V oltage, VBE (sat) -- V IT02827 VBE (sat) -- IC IT02825 VCE (sat) -- IC IT02826 VBE (sat) -- IC 57 --1.0--0.17 --0.01 23 5 7 23 23 5 --1.0 --10 Collector Current, IC -- A IT02822 fT -- IC 100 Gain-Bandwidth Product, fT -- MHz fT -- IC IT02823 2SB1274 V CE = --5V 2SB1274 IC / IB =10 2SB1274 IC / IB =10 0.10.01 1.02355 2 3 5 2 3 5 100 2SD1913 V CE =5V 0.127 0.01 35 1.072 3 2 3 57 5 0.01 0.1 1.0 Ta= 120 --40 25°C 2SD1913 IC / IB =10 Ta=120°C --40°C 25°C 57 1.00.17 0.01 23 5 7 23 23 5 1.0 Ta= --40°C 120°C 25°C 2SD1913 IC / IB =10 Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A IT02820 hFE -- IC --0.17 --0.01 --1.023 7 52 3 2 3 755 100 1000 IT02821 hFE -- IC DC Current Gain, hFE 2SD1913 V CE =5V 2SB1274 V CE = --5V 0.17 0.01 1.023 7 52 3 2 3 755 100 1000 Ta=120°C 25°C --40°C Ta=120°C 25°C --40°C Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A

No.2246-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2000. Specifications and information herein are subject to change without notice. PS 0 20 40 60 80 100 120 140 1600 PC -- Tc IT02830 2SB1274 / 2SD1913 No heat sink 0 20 40 60 80 100 120 140 1600 0.5 1.0 2.0 2.5 1.5 Ambient Temperature, Ta -- °C Case Temperature, Tc -- °C PC -- Ta Collector Dissipation, PC -- W Collector Dissipation, PC -- W IT02831 2SB1274 / 2SD1913 IT02828 A S O 10ms1ms 23 5 7 23 5 7 --10 --100 --1.0 --10 --0.1 ICP = --8A IC = --3A ICP =8A IC =3A DC operation 100ms IT02829 A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A 2SB1274 2SD1913 100µs 500 µs 10ms1ms 23 5 7 23 5 7 10 100 1.0 0.1 DC operation 100ms 100µs 500 µs Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A