2SB1274 NJSEMI | Alldatasheet
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Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1274
DESCRIPTION
- High Reliability
- Low Collector Saturation Voltage '' :VcE(satr-1.0V(Max)@lc=-2A
- Wide Area of Safe Operation
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ Ta=25"C Total Power Dissipation @ Tc=25 \\: Junction Temperature Storage Temperature Range VALUE -60 -60 150 -55-150 UNIT V V V A A W C PIN: \\e
2 Collector
„ ... 3 Emitter - ~ TO-220F package e f i • •
- • D - H • - C - -s- '6 "• H ^ ft - K j . . DIM A B I' ' D F H j K L N R It u mm MIN 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 MAX 15.05 10.10 4.60 0.90 3.30 3.90 , 0.70 I 13.6 1.30 5.20 2.90 2.40 2.85 6.60 A N.I Semi-Couiliictors reserves the right to change test conditions, parameter limits and puckilge dimensions without notice. Information furnished by N.I Semi-Conductors is believed 10 he both accurate und reliable at the time of goinc lo press. I hmever. N.I Semi-Conductors assumes no responsibilit\\r an> errors or omissions discovered in its use. N.I Semi-Conductors enauirmcs customers to verify that datasheets ;ire current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB1274
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VeE(on) ICBO IEBO hpE-1 hpE-2 COB fi PARAMETER Collector-Emitter Breakdown Vpltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -5mA; RBE= °" lc=-1mA; IE=0 lE=-1mA;lc=0 lc= -2A; IB= -0.2A lc= -0.5A; VCE= -5V VCE= -40V; IE= 0 VEB= -4V; lc= 0 lc= -0.5A; VCE= -5V lc= -3A; VCE= -5V lE=0;VCB=-10V;f= 1MHz lc= -0.5A; VCE= -5V MIN -60 -60 TYP. 100 MAX -1.0 -1.0 -0.1 -0.1 280 UNIT V V V V V mA mA PF MHz E.! Classifications Q 70-140 R 100-200 S 140-280