B1156

2SB1156 PANASONIC | Alldatasheet

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Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 n Features l Low collector to emitter saturation voltage VCE(sat) l Satisfactory linearity of foward current transfer ratio hFE l Large collector current IC l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Ratings –130 –80 –30 –20 100 150 –55 to +150 Unit V V V A A W TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 * hFE3 V CE(sat)1 V CE(sat)2 V BE(sat)1 V BE(sat)2 fT ton tstg tf Conditions V CB = –100V , IE = 0 V EB = –5V , IC = 0 IC = –10mA, IB = 0 V CE = –2V , IC = – 0.1A V CE = –2V , IC = –3A V CE = –2V , IC = –10A IC = –8A, IB = – 0.4A IC = –20A, IB = –2A IC = –8A, IB = – 0.4A IC = –20A, IB = –2A V CE = –10V , IC = – 0.5A, f = 10MHz IC = –3A, IB1 = – 0.8A, IB2 = 0.8A, V CC = –50V min –80 typ 0.5 1.2 0.2 max –10 –50 260 – 0.5 –1.5 –1.5 –2.5 Unit mA mA V V V V V MHz ms ms ms Unit: mm 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) 15.0–0.3 21.0–0.516.2–0.5 12.5 Solder Dip 3.5 0.715.0–0.2 5.0–0.2 11.0–0.2 10.9–0.5 5.45–0.3 321 1.1–0.1 2.0–0.2 0.6–0.2 2.0–0.1 f3.2–0.1 3.2 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg *hFE2 Rank classification Rank Q P hFE2 90 to 180 130 to 260 Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification.

PC —T a I C —V CE V CE(sat)—I C V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C ton, tstg, tf — IC Area of safe operation (ASO) 0 150 12510025 75 50 200 160 120 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =3W) (1) (3) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –20 –16 –12 TC =25˚CIB=–300mA –20mA –40mA –60mA –80mA –200mA –140mA –100mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 IC /IB=10 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 (1) IC /IB=10 (2) IC /IB=20 TC =25˚C (1) (2) Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 TC =–25˚C 100˚C 25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 100 300 1000 VCE =–2V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 0.3 100 300 1000 VCE =–10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 0.01 0.1 0.03 0.3 3 tstg ton tf Pulsed tw =1ms Duty cycle=1% I C /IB=10 (–IB1=IB2) VCC =–50V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 10ms t=1ms ICP IC Non repetitive pulse TC =25˚C DC Collector to emitter voltage VCE (V) Collector current IC (A)

R th(t)—t 10–3 10210–2 110–1 10 10 3 104 10–1 102 103 (1) (2) (1) PT=10V · 0.3A (3W) and without heat sink (2) PT=10V · 1A (10W) and with a 100 · 100 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)