B1148

2SB1148 PANASONIC | Alldatasheet

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2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A n Features l Low collector to emitter saturation voltage VCE(sat) l High-speed switching l I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –40 –50 –20 –40 –20 –10 1.3 150 –55 to +150 Unit V V V A A W 2SB1148 2SB1148A 2SB1148 2SB1148A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 * V CE(sat) V BE(sat) fT C ob ton tstg tf Conditions V CB = –40V, IE = 0 V CB = –50V, IE = 0 V EB = –5V , IC = 0 IC = –10mA, IB = 0 V CE = –2V , IC = – 0.1A V CE = –2V , IC = –3A IC = –10A, IB = – 0.33A IC = –10A, IB = – 0.33A V CE = –10V , IC = – 0.5A, f = 10MHz V CB = –10V , IE = 0, f = 1MHz IC = –3A, IB1 = – 0.1A, IB2 = 0.1A, V CC = –20V min –20 –40 typ 100 400 0.1 0.5 0.1 max –50 –50 –50 260 – 0.6 –1.5 Unit mA mA V V V MHz pF ms ms ms 2SB1148 2SB1148A 2SB1148 2SB1148A *hFE2 Rank classification Rank Q P hFE2 90 to 180 130 to 260 Unit: mm 1:Base 2:Collector 3:Emitter I Type Package Unit: mm 1:Base 2:Collector 3:Emitter I Type Package (Y) 7.2–0.3 7.0–0.3 3.0–0.2 3.5–0.2 10.0 +0.3 –0. 0.8–0.21.0–0.2 4.6–0.4 213 1.1–0.1 0.75–0.1 2.3–0.2 0.85–0.1 0.4–0.1 7.0–0.3 0.75–0.1 2.3–0.2 4.6–0.4 1.1–0.1 10.2–0.3 7.2–0.3 2.0–0.2 0.9–0.1 3.5–0.2 2.5–0.2 1.01.0 2.5–0.2 3.0–0.2 1.0 max. 123 0 to 0.15 0 to 0.15 2.5 0.5 max.

Power Transistors 2SB1148, 2SB1148A PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) Without heat sink (PC =1.3W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –12 –10 TC =25˚C –80mA –60mA –50mA –40mA –35mA –20mA –15mA –30mA –25mA –10mA –5mA IB=–100mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 –10 – 0.1 – 0.03 – 0.3 IC /IB=30 TC =100˚C –25˚C 25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 –10 – 0.1 – 0.03 – 0.3 IC /IB=30 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 100 300 1000 3000 10000 VCE =–2V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 100 300 1000 3000 10000 VCE =–10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 100 300 1000 3000 10000 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.01 0.1 0.03 0.3 tstg ton tf Pulsed tw =1ms Duty cycle=1% I C /IB=30 (–IB1=IB2) VCC =–20V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 Non repetitive pulse TC =25˚C 10ms300ms t=1ms ICP IC 2SB1148A 2SB1148 Collector to emitter voltage VCE (V) Collector current IC (A)

Power Transistors 2SB1148, 2SB1148A R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–1 102 103 (1) (2) (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)