B1040WS HDSEMI | Alldatasheet
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Technical content
Features
H igh Diode Semiconductor SOD3 23 V R 40V I FAV
Applications
V R V Mean rectifying current I O A Non repetitive Pe ak Forward Surge Current @ t=8 .3ms I FSM A Power Dissipation P D W Thermal Resistance from Junction to Ambient R θJA Junction Temperature T J Storage Temperature T STG +150 Parameter Symbol Test Condition Min Type Max Unit Reverse voltage V BR I R 1mA V Reverse current I R V R 20V µ A V R 40V µ A Forward voltage V F I F 0.5A 0.45 V I F 0.7A 0.48 0.5 V I F 0.5 0.58 V Diode capacitance C D VR= V, f=1MHz pF Electrical Characteristics (T =25℃ Unless otherwise specified） a Schottky Rectifier Low Voltage Rectification Low Power Consumption Applications High Efficiency DC/DC Conversion HD SD0.48
H igh Diode Semiconductor Typical Characteristics 0.01 0.1 T a =25℃ FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (A) Forward Characteristics T a =100℃ 0 10 20 30 40 100 1000 10000 T a =25℃ T a =100℃ REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) Reverse Characteristics 0 5 10 15 20 25 30 100 CAPACITANCE BETWEEN TERMINALS CT (pF) REVERSE VOLTAGE VR (V) Capacitance Characteristics T a =25 f=1MHz 0 25 50 75 100 125 100 150 200 250 300 POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta (℃) Power Derating Curve
H igh Diode Semiconductor Package Outline Dimensions SOD323 Suggested Pad Layout SOD323
Reel Taping Specifications For Surface Mount Devices-SOD323 H igh Diode Semiconductor 1.25 1.46 2.9