B1030

2SB1030 PANASONIC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 2

Technical content

2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A n Features l Optimum for high-density mounting. l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector EIAJ:SC–72 3:Base New S Type Package 4.0–0.2 marking 2.54–0.15 1.271.27 3.0–0.215.6–0.5 2.0–0.2 0.7–0.1 0.45–0.1 123 +0.2 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –30 –60 –25 –50 – 0.5 300 150 –55 ~ +150 Unit V V V A A mW 2SB1030 2SB1030A 2SB1030 2SB1030A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) fT C ob Conditions V CB = –20V, IE = 0 V CE = –20V , IB = 0 IC = –10mA, IE = 0 IC = –2mA, IB = 0 IE = –10mA, IC = 0 V CE = –10V , IC = –150mA*2 V CE = –10V , IC = –500mA*2 IC = –300mA, IB = –30mA*2 V CB = –10V , IE = 50mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –30 –60 –25 –50 typ – 0.35 200 max – 0.1 340 – 0.6 Unit mA mA V V V V MHz pF *1hFE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 2SB1030 2SB1030A 2SB1030 2SB1030A *2 Pulse measurement

Transistor 2SB1030, 2SB1030A 0 160 40 120 80 14020 100 60 500 400 300 200 100 450 350 250 150 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) –1200 –1000 –800 –600 –400 –200 Ta=25˚C –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA IB=–10mA Collector to emitter voltage VCE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=–25˚C 75˚C 25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 160 120 100 140 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 240 200 160 120 VCE =–10V Ta=25˚C Function=FLAT 4.7kΩ R g=100kΩ 22kΩ Collector current IC (mA) Noise voltage NV (mV ) PC — Ta I C — V CE V BE(sat) — IC V CE(sat) — IC hFE — IC fT — IE C ob — V CB NV — I C